A novel on-chip electrostatic discharge (ESD) protection withcommon discharge line for high-speed CMOS LSIs

A novel on-chip electrostatic discharge (ESD) protection for high-speed CMOS LSI's that operate at higher than 500 MHz has been developed. Introduction of a newly developed common discharge line (CDL) can completely eliminate the protection device influence on the inner circuit operation. This enables minimization of the I/O capacitance by shrinking the dimension of the output transistor, which also serves as a protection device in conventional devices. This new protection (CDL protection) was applied to a high-speed DRAM of which I/O pin capacitance specification is 2 pF. As a result, the ESD tolerance of 4 kV for the charged device model test, 4 kV for the human body model test, and 700 V for the machine model test were obtained. In addition, the DRAM data rate higher than 660 MHz at room temperature was achieved. The results show significant improvement for both ESD and the I/O capacitance, compared with the conventional structure     

Development of a distributed sensing technique using Brillouinscattering

This paper reviews the developments of a distributed strain and temperature sensing technique that uses Brillouin scattering in single-mode optical fibers. This technique is based on strain- and temperature-induced changes in the Brillouin frequency shift. Several approaches for measuring the weak Brillouin line are compared     

Characteristic values of the integral equation satisfied by the Mathieu functions and its application to a system with chirality-pair interaction on a one-dimensional lattice

We investigate low-temperature behaviors of a system with chirality-pair interaction on a one-dimensional lattice. In the course of the investigation, we evaluate asymptotic forms of the characteristic values of the integral equation satisfied by the Mathieu functions. It turns out that the low-temperature behavior of correlation length of the chirality-pair correlation function is different from the one for the Ising model of spin ±1 but akin to the one for the Ising model of infinite spin.     

Loss distribution measurement of silica-based waveguides by using ajaggedness-free optical low coherence reflectometer

The loss distributions in silica-based waveguides are successfully measured using a jaggedness-free optical reflectometer (OLCR). The OLCR reduces jagged fluctuations which appear in Rayleigh backscattering measurements undertaken with conventional OLCRs to within ±1 dB by averaging the wavelength-dependent Rayleigh backscatter signals. Constant loss distributions and a step-like loss increase in the waveguides were clearly observed     

Direct dispersion measurement of highly-erbium-doped optical amplifiers using a low coherence reflectometer coupled with dispersive fourier spectroscopy

The group delay and dispersion, including the erbium ion contributions, of the highly erbium-doped silica planar waveguide amplifier and multicomponent glass fibre amplifiers are directly measured at different pump powers using a low coherence reflectometer and dispersive Fourier spectroscopy. This method derives the refractive index spectra of these amplifiers directly from the produced reflectograms without any physical or mathematical assumptions. The dispersion of the planar waveguide amplifier at 500 mW pumping changes between +300 and -200 ps/km/nm with a 0.4 wt.% erbium concentration.<>     

Structure and molecular motion of poly(ethylene oxide) chains adsorbed on a silica-tethered poly(methyl methacrylate) by the spin label method

The spin-label method was used to study the structure and molecular motion of poly(ethylene oxide) (PEO) chains adsorbed on a silica-tethered poly(methyl methacrylate) (PMMA). Spin-labelled PEO with a narrow molecular weight distribution, having number averaged molecular weight (M _N)=6.0×10³, was adsorbed on the surface of the silica-tethered PMMA with various grafting ratios in carbon tetrachloride solution at 35?°C. ESR spectra were measured at various temperatures after the samples were completely dried. The ESR spectra are composed of two spectra arising from spin-labels attached to “train” and “tail” segments, which are strongly and weakly interacted with the silica surface, respectively. The fractional amount of the “tail” segments increases extremely with the grafting ratio of PMMA. Molecular mobility of the PEO chains estimated from the temperature dependence of the ESR spectra also decreases significantly with the grafting ratio of PMMA. Structure and molecular motion of the PMMA chains tethered on the silica were also studied using the spin-labelled PMMA. Consequently, parts of the PEO segments penetrate into the PMMA chains and is adsorbed on the silica surface (“train” segments), whereas parts of the PMMA segments protrude from the surface. The other PEO segments are entangled with the tethered PMMA chains (“tail” segments).     

Measurement of hyperfine structure constants,g values and tensor polarizability of excited states of Sm I

Atomic-beam laser spectroscopy with fluorescence detection is applied to investigate the hyperfine structure (hfs), Stark and Zeeman effects of the electric dipole transitions of Sm i. The measurements are performed for the four transitions of 0 → 15650.55, 292.58 → 15650.55, 292.58 → 15567.32, and 1489.55 → 16890.59 cm^-1. The hfs constants of the upper and lower levels and the isotope shifts of the transitions are determined. The tensor polarizability of the 15650.55 cm^-1 level is found to be α₂ = -556.2 ± 11.8 kHz/(kV/cm)². Thanks to the accurate g values of the lower levels [Childs, W.J., Goodman, L.S.: Phys. Rev. A 6, 2011 (1972)], the g values of the upper levels are obtained from the observed Zeeman splittings. The values are found to be -0.115907(79), 2.22259(20) and 1.599968(51) for the 15650.55 cm^-1 .1, 15567.32 cm^-1 and 16890.59.cm^-1 levels, respectively.     

Stark and Zeeman spectroscopies of 4f 66s6p 7G1-6 levels in Sm I under external electric and magnetic fields

Systematic study of hyperfine structures, Zeeman and Stark effects in Sm I is performed for the lowest ⁷G_1-6 levels belonging to the configuration 4f ⁶6s6p by atomic-beam laser spectroscopy with fluorescence detection. The hyperfine coupling constants of ⁷G_2-6 levels are determined. From the Zeeman splittings for the 4f ⁶6s ^{2 7}F_2-6 ? 4f ⁶6s6p ⁷G_2-6 transitions, g-values are determined for the ⁷G_2.6 levels and the precision is improved by several orders of magnitude. From the Stark splittings for the ⁷F_0-3 ? ⁷G_1-3 transitions, tensor polarizabilities α ₂(J) are determined for the upper ⁷G_1-3 levels. Particularly for the ⁷G₁ level (15 650.55 cm^?1) which has close-lying opposite-parity level, the isotope dependence of α ₂(J) is clearly observed for the first time.