Subdominant H60 antigen-specific CD8 T-cell response precedes dominant H4 antigen-specific response during the initial phase of allogenic skin graft rejection

In allogeneic transplantation, including the B6 anti-BALB.B settings, H60 and H4 are two representative dominant minor histocompatibility antigens that induce strong CD8 T-cell responses. With different distribution patterns, H60 expression is restricted to hematopoietic cells, whereas H4 is ubiquitously expressed. H60-specific CD8 T-cell response has been known to be dominant in most cases of B6 anti-BALB.B allo-responses, except in the case of skin transplantation. To understand the mechanism underlying the subdominance of H60 during allogeneic skin transplantation, we investigated the dynamics of the H60-specific CD8 T cells in B6 mice transplanted with allogeneic BALB.B tail skin. Unexpectedly, longitudinal bioluminescence imaging and flow cytometric analyses revealed that H60-specific CD8 T cells were not always subdominant to H4-specific cells but instead showed a brief dominance before the H4 response became predominant. H60-specific CD8 T cells could expand in the draining lymph node and migrate to the BALB.B allografts, indicating their active participation in the anti-BALB.B allo-response. Enhancing the frequencies of H60-reactive CD8 T cells prior to skin transplantation reversed the immune hierarchy between H60 and H4. Additionally, H60 became predominant when antigen presentation was limited to the direct pathway. However, when antigen presentation was restricted to the indirect pathway, the expansion of H60-specific CD8 T cells was limited, whereas H4-specific CD8 T cells expanded significantly, suggesting that the temporary immunodominance and eventual subdominance of H60 could be due to their reliance on the direct antigen presentation pathway. These results enhance our understanding of the immunodominance phenomenon following allogeneic tissue transplantation.     

Protocol misbehavior detection framework using machine learning classification in vehicular Ad Hoc networks

Wireless Networks - A novel approach is proposed to detect protocol misbehavior using state-of-the-art machine learning frameworks and entropy. Nodes in Vehicular Ad Hoc Networks (VANETs) use...     

Why does it pay to be selfish in a MANET?

Routing protocols for a mobile ad hoc network have assumed that all mobile nodes voluntarily participate in forwarding others' packets. This was a reasonable assumption because all MNs in a MANET belonged to a single authority. In the near future, however, a MANET may consist of MNs that belong to many different organizations since numerous civilian applications are expected to crop up. In this situation, some MNs may run independently and purposely decide not to forward packets so as to save their own energy. This could potentially lead to network partitioning and corresponding performance degradation. To minimize such situations in MANETs, many studies have explored the use of both the carrot and the stick approaches by having reputation-based, credit-payment, and game theory schemes. This article summarizes existing schemes, identifies their relative advantages, and projects future directions     

Performance analysis of OFDMA uplink systems with symbol timing misalignment

This letter presents our investigation for the effect of symbol timing errors in orthogonal frequency-division multiple access (OFDMA) uplink systems. We express the symbol timing errors between users as the symbol timing misalignments with respect to the desired user. Then, we derive an explicit expression of the signal-to-noise ratio (SNR) as a function of the maximum value of the symbol timing misalignments. Analyses and simulation results show that, to achieve an SNR of 20 dB, the maximum value of the symbol timing misalignments must be less than the cyclic prefix duration plus 6.25% of the useful symbol duration. Based on the resulting SNR degradation, we evaluate the SNR gain with guard subcarriers in order to mitigate the effect of the symbol timing misalignments.     

Fourier-Feynman transform, convolution and first variation

We examine several interesting relationships and expressions involving Fourier-Feynman transform, convolution product and first variation for functionals in the Fresnel class F(B) of an abstract Wiener space B. We also prove a translation theorem and Parseval's identity for the analytic Feynman integral. This revised version was published online in June 2006 with corrections to the Cover Date.     

Thermal behavior of metallodendrimers possessing bis(terpyridinyl)Ru(II) connectivity and different surface functionality

A series of metallodendrimers, assembled by means of bis(terpyridinyl)Ru^(II) connectivity on poly(propylene imine) dendrimer scaffolds, with homogeneous or heterogeneous surfaces, were prepared. Differential scanning calorimetry and thermogravimetric analysis were used to determine their thermal behavior, glass‐transition temperatures, and the decomposition kinetics and temperatures; no synergy effects for these properties were observed for the heterogeneously surfaced constructs in contrast to the corresponding homogeneously coated materials, which exhibited different values depending on their surface functionalities. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 1487–1495, 2004     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained     

Quality-of-Service Based Protection in MPLS Control WDM Mesh Networks

Intelligent methods for automatic protection and restoration are critical in optical transport mesh networks. This paper discusses the problem of quality-of-service (QoS)-based protection in terms of the protection-switching time and availability for end-to-end lightpaths in a WDM mesh network. We analyze the backup lightpath-sharing problem in such networks and study the correlation of the working lightpaths and the impact of the correlation on the sharing of the backup lightpaths. We present a multi-protocol-label-switching (MPLS) control-based fully distributed algorithm to solve the protection problem. The proposed algorithm includes intelligent and automatic procedures to set up, take down, activate, restore, and manage backup lightpaths. It greatly reduces the required resources for protection by allowing the sharing of network resources by multiple backup lightpaths. At the same time, it guarantees, if possible, to satisfy the availability requirement even with resource sharing by taking the correlation of working lightpaths into consideration. A simple analysis of the proposed algorithm in terms of computation time and message complexity indicates that the implementation of the algorithm is practical. The illustrative studies that compare the performance of 1:1, unlimited sharing, and QoS-based backup sharing algorithms indicate that QoS-based sharing achieves comparable performance as unlimited sharing, which is much better than the 1:1 backup scheme in terms of connection blocking probability, average number of connections in the network for a given offered load, and network resource utilization.     

A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current (I_DS-V_DS) curves, substrate resistance effect on the I_DS-V_DS curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.