Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

Parameter extraction on MOSFET transistors using a new optimised fit strategy

Classical parameter-extraction programs rely on the minimisation of the relative current deviation. However, since, especially for analogue applications, the slope of the IDS/VDS curve in the saturation region is at least equally important, a new fit strategy has been developed. This new fit strategy extracts a parameter set which optimises the current residual as well as the slope residual at every point.     

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Ohne Zusammenfassung     

Negative luminescence from mid-wave infrared HgCdTe diode arrays

A self-referencing, optical modulation technique was used to measure the negative luminescence efficiencies of an array of mid-wave infrared HgCdTe photodiodes with cutoff wavelength 4.6 μm as a function of sample temperature. The internal efficiency at a wavelength of 4 μm was 93% at 295 K, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction >50 K at room temperature and >30 K at 240 K. Moreover, the reverse-bias saturation current density was only 0.13 A/cm². The measured transmission and emission spectra were simulated using empirical HgCdTe absorption formulas from the literature.     

Thin film synthesis and the influence of irradiation-induced defects on the superconductivity of La1.8Sr0.2CuO4

Thin superconducting films of La_1.8Sr_0.2CuO₄ have been prepared by magnetron sputter deposition and subsequent temperature treatment. The composition of the films has been determined by Rutherford backscattering and the structure by thin film X-ray diffraction. The onset of superconductivity was about 32 K and the midpoint near 28 K. Defect production in the films by He ion bombardment revealed a drasticT _c reduction with a sensitivity similar to that observed in the Chevrel phases. Oxygen implantation and subsequent annealing led to an enhancement of theT _c onset.     

Analysis, design, and optimization of spiral inductors andtransformers for Si RF ICs

Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, low-order, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory     

Direct modulation of widely tunable twin-guide lasers

The possibility to directly modulate widely tunable lasers up to several gigahertz is desirable in telecom applications. We discuss the dynamic properties of the recently proposed widely tunable twin-guide laser concept. It has promising prospects with a maximum theoretical bandwidth above 20 GHz and the 3-dB bandwidth at 250 mA indicates that an actual bandwidth of 12 GHz should be possible. The current lasers were not designed for high-speed modulation, so only 1-GHz modulation can be reached at the moment.     

Zinn und Antimon in Legierungen

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