Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

ADI-FDTD Method With Fourth Order Accuracy in Time

This letter presents an unconditionally stable alternating direction implicit finite-difference time-domain (ADI-FDTD) method with fourth order accuracy in time. Analytical proof of unconditional stability and detailed analysis of numerical dispersion are presented. Compared to second order ADI-FDTD and six-steps SS-FDTD, the fourth order ADI-FDTD generally achieves lower phase velocity error for sufficiently fine mesh. Using finer mesh gridding also reduces the phase velocity error floor, which dictates the accuracy limit due to spatial discretization errors when the time step size is reduced further.     

高速色散补偿系统中喇曼放大器性能研究

利用喇曼放大器的非线性偏微分耦合方程组,对带喇曼放大器的色散补偿系统进行了仿真,并与传统的仿真方法进行了比较.结果表明:在色散完全补偿系统中,当传输速率较高时,忽略色散后的传统仿真方法的结果,与采用色散补偿技术后使整个系统色散为零的仿真结果有一定偏差,此时不能忽略色散的作用.还对前补偿系统和后补偿系统进行了研究,利用Q值性能判别法,分别得到了信号光脉冲的最佳占空比和最佳脉冲阶数.     

Total surface areas of Group IVA organometallic compounds: Predictors of toxicity to algae and bacteria

There is a high correlation between molecular surface area (TSA) of triorganotin and triorganolead compounds and their toxicity towards a bacterium (Escherichia coli) and an alga (Selenastrum capricornutum). Parallel attempts to correlate other Group IVA organometals incorporating silicon or germanium were unsuccessful. It was further demonstrated, however, that a high correlation was obtainable between certain series of compounds with the same organic substituent but different metal centers involving all Group IVA elements. In both instances, the inability to obtain a quantitative structure-activity relationship (QSAR) for all systems studied appears to be a function of the solubility of the compounds. While organotin TSA values have been found to correlate well with their toxicities toward various organisms, this study clearly suggests that this type of QSAR can be readily extended to include other organometal systems, provided that there is no solubility problem and the toxicity is a function of the hydrophobicity of the organometal compounds.     

IS-78: LonWorks® goes into hazardous areas

This paper introduces LonWorks technology, intrinsic safety and how the two are combined in the IS-78 physical channel which enables networks to be taken into hazardous areas. The capabilities of the physical channel are described, together with some applications in which it has been used.     

R?ntgenspektrometrische Elementbestimmung in Abwasser: Probenvorbereitung und Matrixkorrekturverfahren

Zusammenfassung Für Elementbestimmungen in Abwasser wird ein Röntgenfluorescenzverfahren beschrieben. Zur Probenvorbereitung werden die Elemente durch Gefriertrocknung auf einem inerten Träger angereichert. Diese Anreicherung ist nicht selektiv und erfaßt praktisch alle in Abwasser gelösten und suspendierten Verunreinigungen. Für die Berechnung der Elementkonzentrationen aus den gemessenen Fluorescenzintensitäten wird ein Matrixkorrekturverfahren angegeben, welches dem unterschiedlichen Absorptionsverhalten der Probenmatrix Rechnung trägt. Die Massenabsorptionskoeffizienten werden durch Messung der diffus gestreuten Bremsstrahlung bzw. der Comptonstreustrahlung ermittelt. Die Selbstabsorption des zu bestimmenden Elementes wird rechnerisch berücksichtigt. Das Korrekturverfahren kann auf alle mit Röntgenfluorescenzanalyse bestimmbaren Elemente angewendet werden.

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Determination of elements in waste water by x-ray fluorescence analysis: Sample preparation and matrix correction method

Summary For sample preparation the elements are enriched upon an inert carrier by freeze-drying. This enriching procedure is not selective and collects all dissolved and suspended contaminations from the waste water. In order to calculate the element concentrations from the measured fluorescence intensities a matrix correction method is given which considers the different absorption behaviour of the matrix. The mass absorption coefficients are obtained by measuring the scattered X-ray tube spectrum or a Compton scattered X-ray tube line, respectively. The self-absorption of the element to be determined is taken into account. The correction method is applicable to all elements detectable by X-ray fluorescence.

Herrn Dr. H. Wagner danken wir für das stete Interesse, die zahlreichen konstruktiven Diskussionen und die Hilfe beim Abfassen des Manuskripts.