Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Semiconductors - It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode...     

Limiting Velocity and Dispersion Law of Domain Walls in Ferrimagnets Close to the Spin Compensation Point

JETP Letters - The motion of domain walls in GdFeCo-type ferrimagnets near the point of compensation of sublattice spins s1 and s2, when the effects of the exchange increase in the limiting wall...     

Erratum to: Analysis of the Purcell Effect in the Waveguide Mode by S-Quantization

Optics and Spectroscopy - 10.1134/S0030400X17050095     

Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix

Enhancement of spontaneous emission in a resonant Bragg quantum well (QW) structure with 60 periods of triple InAs monolayers embedded in a GaAs matrix is studied experimentally and theoretically. From measurements of the time‐resolved photoluminescence, besides the QW exciton at 1.47 eV, a specific super‐radiant (SR) emission demonstrating nonlinear properties is found. The SR mode shows a near‐quadratic dependence of intensity on excitation power, while its energy position follows the Bragg condition. It is revealed that the SR mode shows a peculiar non‐monotonic dependence of intensity on direction, with a maximum observed at approximately 40°. The enhancement in the SR emission at a specific direction is correlated well with suggested theoretical consideration of the modal Purcell factor for periodic quantum well structures.     

An infinite family of simply connected flag-transitive tilde geometries

We consider tilde-geometries (orT-geometries), which are geometries belonging to diagrams of the following shape: Here the rightmost edge stands for the famous triple cover of the classical generalized quadrangle related to the group Sp₄(2). The automorphism group of the cover is the nonsplit extension 3·Sp₄(2) – 3 ·S ₆. Five examples of flag-transitiveT-geometries were known. These are rank 3 geometries related to the groupsM ₂₄ (the Mathieu group),He (the Held group) and and 3⁷·Sp₆(2) (a nonsplit extension); a rank 4 geometry related to the Conway groupCo ₁ and a rank 5 geometry related to the Fischer-Griess Monster groupF ₁. In the present paper we construct an infinite family of flag-transitiveT-geometries and prove that all the new geometries are simply connected. The automorphism group of the rankn geometry in the family is a nonsplit extension of a 3-group by the symplectic group Sp_2n (2). The rank of the 3-group is equal to the number of 2-dimensional subspaces in ann-dimensional vector space over GF(2).     

Analogue of a spin flop phase transition for an array of magnetic moments with dipole interaction

In a two-dimensional array of magnetic moments with planar magnetization and relatively weak anisotropy in the basal plane, a stepwise phase transition is induced by an external magnetic field parallel to the easy axis of the system. This transition is similar to the spin flop phase transition in weakly anisotropic Heisenberg antiferromagnets with the significant difference that it is accompanied by the rearrangement of the sublattice structure of the magnet; i.e., it can be interpreted as a topological transition. The transition should manifest itself for arrays of submicron magnetic particles (magnetic dots) on nonmagnetic substrates, which have recently become the object of intensive research.     

Ground-state energy of pionic hydrogen to one loop

We investigate the ground-state energy of the atom (pionic hydrogen) in the framework of QCD + QED. In particular, we evaluate the strong energy-level shift. We perform the calculation at next-to-leading order in the low-energy expansion in the framework of the relevant effective field theory. The result provides a relation between the strong energy shift and the pion-nucleon S-wave scattering lengths - evaluated in pure QCD - at next-to-leading order in isospin-breaking and in the low-energy expansion. We compare our result with available model calculations. Received: 11 June 2002 / Published online: 9 October 2002     

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.