C4/C5烃催化裂解制低碳烯烃的研究进展

从催化剂类型、裂解工艺、催化裂解的影响因素和裂解机理4个方面对国内外C4／C5烃催化裂解制低碳烯烃的研究进行了综述。催化裂解制低碳烯烃催化剂主要采用ZSM-5分子筛系列催化剂，在此基础上发展了酸改性或水热改性高硅ZSM系列分子筛及介孔MCM41分子筛。总结了国内外C4／C5烃的裂解工艺，认为影响催化裂解的主要因素是裂解原料、催化剂类型及工艺条件。目前，裂解机理主要是自由基与碳正离子机理相结合的机理。并简述了本课题组目前有关C4烷烃催化裂解的主要研究进展。     

两个由2,3,5-吡啶三酸构筑的三维网状配位聚合物的合成、晶体结构和性质研究

2,3,5-吡啶三酸在水热条件下分别与Mn(CH3COO)2·4H2O和Co(CH3COO)2·4H2O反应,得到了2种金属有机骨架(MOFs)配合物[Mn1.5(2,3,5-pta)(H2O)4]n(1)和[Co1.5(2,3,5-pta)(H2O)4]n(2),其中2,3,5-H3pta=2,3,5-吡啶三酸。利用元素分析、红外、热重和X-射线单晶衍射分析进行了表征。分析结果表明2个配合物属于同构晶体:晶系为单斜,空间群为P21/c,其中,吡啶三酸配体完全脱去3个质子,并分别与4个六配位的金属离子相连,在空间形成一种三维网络状结构。热重分析表明,配合物1的稳定性要高于配合物2。     

污垢热阻动态监测装置及其传热计算方法的研究

介绍了污垢热阻动态监测装置的构成及特点.根据传热学基本原理,对该套装置进行了光滑管对流换热性能测试,结果表明两侧流体热平衡最大偏差小于10%,实验结果与经验公式计算的Nu数相吻合,其最大偏差小于l0%.用该装置进行换热表面污垢的动态自动监测,可以得出准确可靠的实验结果.     

C4/C5烃催化裂解制低碳烯烃的研究进展

从催化剂类型、裂解工艺、催化裂解的影响因素和裂解机理4个方面对国内外C4/C5烃催化裂解制低碳烯烃的研究进行了综述。催化裂解制低碳烯烃催化剂主要采用ZSM-5分子筛系列催化剂,在此基础上发展了酸改性或水热改性高硅ZSM系列分子筛及介孔MCM-41分子筛。总结了国内外C4/C5烃的裂解工艺,认为影响催化裂解的主要因素是裂解原料、催化剂类型及工艺条件。目前,裂解机理主要是自由基与碳正离子机理相结合的机理。并简述了本课题组目前有关C4烷烃催化裂解的主要研究进展。     

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

A Distribution Management System for Relational Databases in Cloud Environments

For a transaction processing system to operate effectively and efficiently in cloud environments, it is important to distribute huge amount of data while guaranteeing the ACID (atomic, consistent, isolated, and durable) properties. Moreover, database partition and migration tools can help transplanting conventional relational database systems to the cloud environment rather than rebuilding a new system. This paper proposes a database distribution management (DBDM) system, which partitions or replicates the data according to the transaction behaviors of the application system. The principle strategy of DBDM is to keep together the data used in a single transaction, and thus, avoiding massive transmission of records in join operations. The proposed system has been implemented successfully. The preliminary experiments show that the DBDM performs the database partition and migration effectively. Also, the DBDM system is modularly designed to adapt to different database management system (DBMS) or different partition algorithms.     

A case study of defects due to process marginalities in deep sub-micron technology

The difficulties in identifying the precise defect location and real leakage path is increasing as the integrated circuit design and process have become more and more complicated in and below deep sub-micron technology node. Most of the defects causing chip leakage are detectable with only one of the failure analysis (FA) tools such as liquid crystal detection (LCD) or photon emission microscope (PEM). However, due to process marginalities some defects are often not detectable with only one FA tool [Hung-Sung Lin, Wen-Tung Chang, Chun-Lin Chen, Tsui-Hua Huang, Vivian Chiang, Chun-Ming Chen. A study of asymmetrical behaviour in advanced nano SRAM devices. In: 13th IPFA proceedings; July 2006. p. 63–6; Kruseman Bram, Majhi Ananta, Hora Camelia, Eichenberger Stefan, Meirlevede Johan. Systematic defects in deep sub-micron technologies. ITC international test conference, 2004. p. 290–9.]. This paper present an example of an abnormal power consumption process related defect which could only be detected with more advanced FA tools.