Adaptive viewpoints for co-browsing on heterogeneous devices

Co-browsing is an activity in which a group of users navigate their way through of a set of Web pages together for a shared purpose. Effective co-browsing among users with different device capabilities requires a shared understanding of those Web pages. This paper demonstrates the concept of shared viewpoints (SVPs), and personal viewpoints (PVPs), for co-browsing, before detailing a framework for implementing these concepts. Finally, the effectiveness of the framework is presented through a perceptual experiment.     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

New encapsulation development for fine pitch IC devices

The continuous reduction of chip size driven by the market demand has a significant impact on circuit design and assembly process of IC packages. Shrinking chip size and increasing I/O counts require finer bond pad pitch and bond pad size for circuitry layout. As a result, serious wire deflection during transfer molding process could make adjacent wires short, and this issue becomes more critical as a smaller wire diameter has to be applied for the finer pitch wire bonded IC devices.This paper presents a new encapsulation process development for 50 μm fine pitch plastic ball grid array package. Since reduced wire diameter decreases the bending strength of bonded wires significantly, wire deflection during molding process becomes quite serious and critical. Experiments on conventional transfer molding were conducted to evaluate wire span threshold with 23.0 μm diameter gold wire. The results show that the wire span threshold is about 4.1 mm, which is much shorter than the wire span threshold of over 5.0 mm for wire with 25.4 μm diameter. Finite element analysis shows there is a significant difference in the wire deflection between 23.0 μm gold wire and 25.4 μm gold wire diameter under the same action of mold flow. A novel encapsulation method is introduced using non-sweep solution. The wire span could be extended to over 5.0 mm with wire sweep less than 1%. Reliability tests conducted showed that all the units passed 1000 temperature cycles (−55 to 125 °C) with JEDEC moisture sensitivity level 2a (60 °C/60% relative humidity for 120 h) and 3 times reflow (peak temperature at 220–225 °C). It is believed that this solution could efficiently overcome the risk of wire short issues and improve the yield of ultra fine pitch wire bonds in high-volume production.     

Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure

It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.<>     

Signal processing using cellular neural networks

The cellular neural network (CNN) architecture combines the best features from traditional fully-connected analog neural networks and digital cellular automata. The network can rapidly process continuous-valued (gray-scale) input signals (such as images) and perform many computation functions which traditionally were implemented in digital form. Here, we briefly introduce the the theory of CNN circuits, provide some examples of CNN applications to image processing, and discuss work toward a CNN implementation in custom CMOS VLSI. The role of analog computer-aided design (CAD) will be briefly presented as it relates to analog neural network implementation.This work is supported in part by the Office of Naval Research under Contract N00014-89-J1402, and the National Science Foundation under grant MIP-8912639.     

Transition of 3D to 2D growth modes of InAs grown on GaAs

We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.     

Filamentous growth in activated sludge

Applied Biochemistry and Biotechnology - Bulking and foaming in activated sludge have been associated with filamentous overgrowth. FilamentousNocardia amarae and nonfilamentousPseudomonas...     

Microbial synthesis and characterization of physiochemical properties of polyhydroxyalkanoates (PHAs) produced by bacteria isolated from activated sludge obtained from the municipal wastewater works in Hong Kong

The first objective of this study was the measurement of physical properties of P(3HB-co-3HV) copolymers with different (hydroxybutyrate) HB to (hydroxyvalerate) HV ratios produced by Bacillus cereus (TRY2) isolated from activated sludge. The 3HV PHBV copolymers were 0.05, 22.6, 39.2, 54.1, and 69.1 mol%, respectively. The second objective was to study possible wastewater treatment and production of PHAs at the same time by B. cereus (TRY2) and Pseudomonas spp. (TOB17) (both were isolated from activated sludge), recombinant Bacillus DH5α, and a combination of the above three bacteria. The results were satisfactory; the maximum COD and TOC of the sewage sludge reduced were 53.5% and 67.5%, respectively.     

Operation of a novel anaerobic biofilter for treating food-processing wastewater

Applied Biochemistry and Biotechnology - An anaerobic biofilter was operated with 4500 mg COD/L food-processing waste water, fed at 10 d of hydraulic retention time (HRT). In 45 d after seeding,...