Modeling Impact of ROADM Intra-Node Add/Drop Contention on a Single Node Lightpath Blocking Performance

We propose an analytical model to evaluate the lightpath blocking performance for a single ROADM node with intra-node add/drop contention,in which the number of lightpaths that can be added/dropped with the same wavelength is limited by the add/drop contention factor.Different models of traffic load per nodal degree are considered to validate the effectiveness of the analytical model.The simulation results show that the proposed analytical model is effective in predicting the performance for different values of add/drop contention factor C and for variable offered loads at the node.The add/drop contention factor shows an important impact on the lightpath blocking performance and properly raising the contention factor can significantly improve the lightpath blocking performance.When the add/drop contention factor C exceeds a certain level,the performance of a ROADM with intra-node contention is close to that of a contentionless ROADM.     

冲突检测中的主动规则技术

提出主动数据库技术的一个新应用——主动规则应用于虚拟装配中的冲突检测，使虚拟装配具有了主动能力；论述分析了虚拟装配过程中冲突检测的主动功能需求；分析了虚拟装配环境的事件、每件、动作；提出了规则模型；对规则进行了描述。     

Exposed Die-Top Encapsulation Molding for an Improved High- Performance Flip Chip BGA Package

The recent advancement in high- performance semiconductor packages has been driven by the need for higher pin count and superior heat dissipation. A one-piece cavity lid flip chip ball grid array (BGA) package with high pin count and targeted reliability has emerged as a popular choice. The flip chip technology can accommodate an I/O count of more than five hundreds500, and the die junction temperature can be reduced to a minimum level by a metal heat spreader attachment. None the less, greater expectations on these high-performance packages arose such as better substrate real estate utilization for multiple chips, ease in handling for thinner core substrates, and improved board- level solder joint reliability. A new design of the flip chip BGA package has been looked into for meeting such requirements. By encapsulating the flip chip with molding compound leaving the die top exposed, a planar top surface can be formed. A, and a flat lid can then be mounted on the planar mold/die top surface. In this manner the direct interaction of the metal lid with the substrate can be removed. The new package is thus less rigid under thermal loading and solder joint reliability enhancement is expected. This paper discusses the process development of the new package and its advantages for improved solder joint fatigue life, and being a multichip package and thin core substrate options. Finite-element simulations have been employed for the study of its structural integrity, thermal, and electrical performances. Detailed package and board-level reliability test results will also be reported     

通信性能评估的仿真实验研究

研究了流量控制和差错控制对通信性能的综合影响，着重分析了停止-等待协议和连续ARQ协议的优缺点，讨论了信道利用率和帧长的关系。介绍了几种多点接人技术的基本原理，如CSMA和CSMA／CD，并给出了各自相应的性能仿真曲线。所设计的通信性能评估实验，仿真界面形象丰富，与实验知识点紧密结合，可以大大提高实验教学的效率和质量。     

Cs-K混合蒸气中Cs(8D)+K(4S)碰撞能量转移

在Cs-K混合蒸气中，两步激发Cs原子到8D态，观察了Cs(8D) K(4S)→Cs(5D) K(4P)碰撞能量合并逆过程(REP，reverse energy pooling)。应用双调制技术探测K(4P)原子发射的荧光，基态K原子密度用光学吸收方法测量。得到了REP速率系数，讨论了其它过程对速率系数的影响．     

具Hardy-Sobolev临界指数的奇异椭圆方程多解的存在性

运用变分方法研究了下面问题-Δpu=μupx(s)s-2u f(x,u),x∈Ω,u=0,x∈Ω,多重解的存在性,其中Ω是一个具有光滑边界的有界区域.     

Mg_(0.15)Zn_(0.85)O:Tb合金薄膜的阴极射线发光性质研究

采用溶胶凝胶方法成功地制备了掺杂稀土铽离子的 Zn O和 Mg0 .1 5Zn0 .85薄膜。通过对 X射线衍射结果的分析表明 ,稀土离子替代了 Zn2 +的格位 ,进入了半导体基质的晶格中。从阴极射线发光结果可以发现 ,在Mg0 .1 5Zn0 .85O基质中 ,可以观察到来源于稀土铽离子各能级的发射 ,而 Zn O:Tb的薄膜只能观察到较强的铽离子 5D4 — 7F5能级的跃迁。这可能是由于 Mg0 .1 5Zn0 .85O基质的能隙 (3 .65 e V)比 Zn O更宽 (3 .3 e V) ,其对铽离子的能量传递更有效的缘故。     

NiTi合金中马氏体相的低频力学谱研究

我们用最近研制成功的LMA型低频力学谱测试系统对NiTi合金马氏体相进行了在很大频率范围内（0．003～1Hz）的低频等温力学谱和温度谱的测量．我们研究的形状记忆合金NiTi（Ni50．2at％）试样长34mm，直径1mm细丝．经一定热处理，分别在333K．343K和353K做了内耗随频率的变化的测量。实验表明：频率越小，内耗越大，也就是内耗随频率减少而增大。同时我们采用阶梯升温的方法在八个温度下每个温度测量三种频率（1Hz，0．1Hz，0．01Hz）的内耗，结果清楚地表明：不同频率下，内耗峰都出现在372K（99℃）。而且频率越低，峰高越高。这是具有相变峰的特点：相变峰的峰温不随测量频率不同而变化，相变峰高度随频率减少而增大。我们还测量了在1Hz与0．5Hz频率下内耗随温度的变化。本文用马氏体相的位错理论初步讨论了上述实验结果。     

完全非线性偏微分方程解的Gevrey微局部正则性

本文中，我们首先简要回顾了Gevrey类中的仿微分运算，然后考察了相关的完全非线性偏微分方程的象征的一些性质。作为应用，我们得到解在椭圆点附近的Gevrey微局部正则性。