Additive Hermitian idempotent preservers between operator algebras

Let L be an additive map between (real or complex) matrix algebras sending $n\times n$ Hermitian idempotent matrices to $m\times m$ Hermitian idempotent matrices. We show that there are nonnegative integers $p,q$ with $n(p+q)=r\le m$ and an $m\times m$ unitary matrix U such that$L(A)=U[(I_p?A)\oplus (I_q?A^t)\oplus 0_{m?r}]U^{?},\text{for any}n\times n\text{Hermitian}A\text{with rational trace}.$ We also extend this result to the (complex) von Neumann algebra setting, and provide a supplement to the Dye-Bunce-Wright Theorem asserting that every additive map of Hermitian idempotents extends to a Jordan ?-homomorphism.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Coplanar waveguide-fed uniplanar bow-tie antenna

The design of coplanar waveguide (CPW)-fed bow-tie antenna for the 2.4-GHz ISM band is described. A coplanar waveguide-to-coplanar strips (CPW-to-CPS) balun is used to obtain the balanced feed line for the printed bow-tie. An analysis method based on the mixed potential integral equation method is used to characterize the input characteristics of the bow-tie antenna. The numerical results obtained are in good agreement with the experimental data. Through experiments with bow-tie antennas of various extended angles, the bow-tie antenna with a 90° extended angle exhibits the widest bandwidth in the desired frequency band which has a bandwidth of 17% for a VSWR <1.5:1     

Broad-band MMICs based on modified loss-compensation method using 0.35-/spl mu/m SiGe BiCMOS technology

Using the concept of loss compensation, novel broad-band monolithic microwave integrated circuits (MMICs), including an amplifier and an analog multiplier/mixer, with LC ladder matching networks in a commercial 0.35-mum SiGe BiCMOS technology are demonstrated for the first time. An HBT two-stage cascade single-stage distributed amplifier (2-CSSDA) using the modified loss-compensation technique is presented. It demonstrates a small-signal gain of better than 15 dB from dc to 28 GHz (gain-bandwidth product=157 GHz) with a low power consumption of 48 mW and a miniature chip size of 0.63 mm² including testing pads. The gain-bandwidth product of the modified loss-compensated CSSDA is improved approximately 68% compared with the conventional attenuation-compensation technique. The wide-band amplifier achieves a high gain-bandwidth product with the lowest power consumption and smallest chip size. The broad-band mixer designed using a Gilbert cell with the modified loss-compensation technique achieves a measured power conversion gain of 19 dB with a 3-dB bandwidth from 0.1 to 23 GHz, which is the highest gain-bandwidth product of operation among previously reported MMIC mixers. As an analog multiplier, the measured sensitivity is better than 3000 V/W from 0.1 to 25 GHz, and the measured low-frequency noise floor and corner frequency can be estimated to be 20 nV/sqrt(Hz) and 1.2 kHz, respectively. The mixer performance represents state-of-the-art result of the MMIC broad-band mixers using commercial silicon-based technologies     

Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation subcircuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.     

Effect of Thickness of the p-AlGaN Electron Blocking Layer on the Improvement of ESD Characteristics in GaN-Based LEDs

The following letter presents a study regarding GaN-based light-emitting diodes (LEDs) with p-type AlGaN electron blocking layers (EBLs) of different thicknesses. The study revealed that the LEDs could endure higher electrostatic discharge (ESD) levels as the thickness of the AlGaN EBL increased. The observed improvement in the ESD endurance ability could be attributed to the fact that the thickened p-AlGaN EBL may partly fill the dislocation-related pits that occur on the surface of the InGaN-GaN multiple-quantum well (MQW) and that are due to the strain and the low-temperature-growth process. If these dislocation-related pits are not partly suppressed, they will eventually result in numerous surface pits associated with threading dislocations that intersect the InGaN-GaN (MQW), thereby reducing the ESD endurance ability. The results of the experiment show that the ESD endurance voltages could increase from 1500 to 6000 V when the thickness of the p-AlGaN EBL in the GaN LEDs is increased from 32.5 to 130 nm, while the forward voltages and light output powers remained almost the same.     

Novel,organosoluble, light‐colored fluorinated polyimides based on 2,2′‐bis(4‐amino‐2‐trifluoromethylphenoxy)biphenyl or 2,2′‐bis(4‐amino‐2‐trifluoromethylphenoxy)‐1,1′‐binaphthyl

Two series of fluorinated polyimides were prepared from 2,2′‐bis(4‐amino‐2‐trifluoromethylphenoxy)biphenyl ( 2 ) and 2,2′‐bis(4‐amino‐2‐trifluoromethylphenoxy)‐1,1′‐binaphthyl ( 4 ) with various aromatic dianhydrides via a conventional, two‐step procedure that included a ring‐opening polyaddition to give poly(amic acid)s, followed by chemical or thermal cyclodehydration. The inherent viscosities of the polyimides ranged from 0.54 to 0.73 and 0.19 to 0.36 dL/g, respectively. All the fluorinated polyimides were soluble in many polar organic solvents, such as N,N‐dimethylacetamide and N‐methylpyrrolidone, and afforded transparent and light‐colored films via solution‐casting. These polyimides showed glass‐transition temperatures in the ranges of 222–280 and 257–351 °C by DSC, softening temperatures in the range of 264–301 °C by thermomechanical analysis, and a decomposition temperature for 10% weight loss above 520 °C both in nitrogen and air atmospheres. The polyimides had low moisture absorptions of 0.23–0.58%, low dielectric constants of 2.84–3.61 at 10 kHz, and an ultraviolet–visible absorption cutoff wavelength at 351–434 nm. Copolyimides derived from the same dianhydrides with an equimolar mixture of 4,4′‐oxydianiline and diamine 2 or 4 were also prepared and characterized. © 2004 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 2416–2431, 2004     

A novel ultracompact two-mode-interference wavelength division multiplexer for 1.5-/spl mu/m operation

A novel ultracompact 2/spl times/2 wavelength division multiplexer (WDM) for 1.55-/spl mu/m operation based on highly dispersive two-mode interference (TMI) was designed, theoretically modeled, and verified using a finite-difference-time-domain (FDTD) method. A two-moded waveguide assisted with a dispersive tooth-shaped grating provided a mode-dependent reflection band of central wavelength at 1.55 /spl mu/m. The wavelengths of 1538 and 1572 nm that were at the band edges and had the lowest reflection losses and relatively high dispersion were selected for wavelength multiplexing. The result showed that the wavelengths were separated by grating dispersion in a coupler length of 75 /spl mu/m which was much shorter than the required length of 1.1 mm in a regular TMI multiplexer of no grating. Insertion loss of about 1.7 dB and channel contrast of about 12 dB were achieved.     

Effect of Cu concentration on the reactions between Sn-Ag-Cu solders and Ni

The reaction between the Sn-Ag-Cu solders and Ni at 250°C for 10 min and 25 h was studied. Nine different Sn-Ag-Cu solders, with the Ag concentration fixed at 3.9 wt.% and Cu concentrations varied between 0.0–3.0 wt.%, were used. When the reaction time was 10 min, the reactions strongly depended on the Cu concentration. At low-Cu concentrations (≦0.2 wt.%), only a continuous (Ni_1−xCu_x)₃Sn₄ layer formed at the interface. When the Cu concentration increased to 0.4 wt.%, a continuous (Ni_1−xCu_x)₃Sn₄ layer and a small amount of discontinuous (Cu_1−yNi_y)₆Sn₅ particles formed at the interface. When the Cu concentration increased to 0.5 wt.%, the amount of (Cu_1−yNi_y)₆Sn₅ increased and (Cu_1−yNi₆)₆Sn₅ became a continuous layer. Beneath this (Cu_1−yNi_y)₆Sn₅ layer was a very thin but continuous layer of (Ni_1−xCu_x)₃Sn₄. At higher Cu concentrations (0.6–3.0 wt.%), (Ni_1−xCu_x)₃Sn₄ disappeared, and only (Cu_1−yNi_y)₆Sn₅ was present. The reactions at 25 h also depended strongly on the Cu concentration, proving that the strong concentration dependence was not a transient phenomenon limited to a short reaction time. The findings of this study were rationalized using the Cu-Ni-Sn isotherm. This study shows that precise control over the Cu concentration in solders is needed to produce consistent results.