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Vukusic J. Bryllert T. Arezoo Emadi T. Sadeghi M. Stake J. 《Electron Device Letters, IEEE》2007,28(5):340-342
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. The HBV device topology was designed for efficient thermal dissipation and high efficiency. To verify simulations, the device was flip-chip soldered onto embedding microstrip circuitry on an aluminum nitride substrate. This hybrid circuit was then mounted in a waveguide block without any movable tuners. From the resulting RF measurements, the maximum output power was 195 mW at 113 GHz, with a conversion efficiency of 15%. The measured 3-dB bandwidth was 1.5% 相似文献
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Bryllert T. Olsen A. Vukusic J. Emadi T.A. Ingvarson M. Stake J. Lippens D. 《Electronics letters》2005,41(3):131-132
A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/InAlAs/AlAs epitaxial layers on an InP substrate 相似文献
3.
K. B. Cooper R. J. Dengler N. Llombart T. Bryllert G. Chattopadhyay I. Mehdi P. H. Siegel 《Journal of Infrared, Millimeter and Terahertz Waves》2009,30(12):1297-1307
High-resolution, long-range detection of person-borne concealed weapons has recently been demonstrated using a terahertz imaging
radar. However, the radar’s image acquisition time must be greatly shortened, from minutes to less than one second, before
the system can be effectively deployed in a real-life threat environment. Here we analyze the major system modifications necessary
for increasing the speed of a terahertz imaging radar by up to two orders of magnitude. 相似文献
4.
Bryllert T. Wernersson L.-E. Froberg L.E. Samuelson L. 《Electron Device Letters, IEEE》2006,27(5):323-325
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 /spl times/ 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V/sub ds/=0.15 V (V/sub g/=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced. 相似文献
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Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces 总被引:2,自引:0,他引:2
M. Borgström T. Bryllert B. Gustafson J. Johansson T. Sass L. E. Wernersson W. Seifert L. Samuelson 《Journal of Electronic Materials》2001,30(5):482-486
A site control technique for individual InAs quantum dots (QDs) formed by self-assembling has been developed, using scanning
electron microscope (SEM) assisted nano-deposition and metal organic vapor phase epitaxy (MOVPE). In a first step we characterize
a device with randomly distributed InAs QDs on InP, using resonant tunneling and transmission electron microscopy (TEM). Secondly,
we use nano-scale deposits, created at the focal point of the electron beam on an InP based heterostructure, as “nano growth
masks”. Growth of a thin InP layer produces nano-holes above the deposits. The deposits are removed by oxygen plasma etching.
When InAs is supplied on this surface, QDs are self-assembled at the hole sites, while no InAs dots are observed in the flat
surface region. A vertical single electron tunneling device is proposed, using the developed technique. 相似文献
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