Widely tunable bottom-emitting vertical-cavity SOAs

We present bottom-emitting tunable vertical-cavity semiconductor optical amplifiers (VCSOAs) with an effective wavelength tuning range of >20 nm. These devices utilize a high reflectivity micromechanically tunable Bragg mirror as the back reflector. Compared with our first generation tunable VCSOAs, the bottom-emitting devices exhibit a two-fold increase in the effective tuning range as well as a five-fold reduction in the required tuning voltage.     

New lamps for old: the story of electric lighting

Of all the products of electrical technology, none has made a more profound difference to our way of life than the humble light bulb. The author describes the history of the light bulb from the time it was introduced and started to replace gas lamps to the present day. In particular the author discusses the early developments in arc lighting and incandescent filament lamps. The author also discusses the introduction of mercury vapour lamps, fluorescent lamps, and evacuation of the lamps     

High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.     

Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHzbandwidth-efficiency product

Results of the first fabrication and measurement of travelling-wave photodetectors are reported. The devices have bandwidths as high as 172 GHz, the highest reported for a p-i-n photodetector, and bandwidth-efficiency products as large as 76 GHz, the largest reported for any photodetector without gain. Comparisons with vertically illuminated and waveguide photodetectors fabricated on the same wafer establish the superior performance of travelling-wave photodetectors. Microwave loss on the travelling-wave photodetector structure is identified as a bandwidth limitation     

Long distance fiber-optic transmission of C-band microwave signals to and from a satellite antenna

We demonstrate here the use of high-speed semiconductor lasers and detectors with low loss optical fiber for the transmission of the 500-MHz C-band microwave signal spectrum to and from a satellite antenna. The optical system has low attenuation and large band, width, so the microwave signals can be transmitted directly at the microwave frequency (4 or 6 GHz) over 20 km of fiber without regeneration or qualization. The optical system introduces ≈ 1 dB or less of degradation for both low spectral density QPSK signals and high spectral density FM video signals present in typical satellite transmission systems. For the video signals, the signal to noise after AM conversion was reduced from 56 to 55 dB. The microwave drive level to the laser must be significantly larger (typically > -10 dBm) than the intensity noise of the laser, yet small enough (typically < 10 dBm) to reduce the intermodulation distortion signals to an acceptable level. The laser bias current must be several times threshold so that the resonance frequency is beyond the frequency band of interest (4-6 GHz in this case). A flat modulation response is then obtained, and the intensity noise and intermodulation levels are low.     

High-speed, polyimide-based semi-insulating planar buried heterostructures

We describe planar buried heterostructure lasers which have low capacitance (lpF), large bandwidth (19GHz), high power (>20mW/facet) and high temperature operation (100°C). These lasers are very suitable for long-distance, highspeed digital and analogue signal transmission.     

Weather Risk in Offshore Projects

Risk analysis tools have been used to help manage various projects. This paper describes a case study in which an extension to the stochastic project network model was developed for a risk analysis of an oil platform installation, quantifying the possible impact of the weather on the project's schedule. Examination of the weather data suggested the use of a Markov weather model combined with a separate residence time distribution for key states. The weather model was incorporated into the stochastic project network allowing the interactions of the various project uncertainties to be examined. While the weather introduced a significant additional risk to the project, analysis of management's options indicated that much of the risk might be avoided. In particular, the analysis quantified the benefits of scheduling the project start to take advantage of the seasonal variations and hiring heavy duty equipment to operate in more arduous conditions.     

A device to measure the cross-sectional area of soft connectivetissues

A device has been designed and fabricated to measure the cross-sectional area of soft connective tissues ex vivo. It consists of two displacement transducers; one sensing tissue thickness and the other sensing width. Outputs are recorded (via an analog to digital interface) using a personal computer. Numerical integration of a thickness versus width plot computes cross-sectional area. This plot also provides a quality check of acquired data. This device has been successfully used in biomechanical studies of rabbit patellar tendons, rat medial collateral ligaments, and dissected specimens of human fascia.     

Millimeter-wave asymmetric Fabry-Perot modulators

We have designed, fabricated, and characterized GaAs-AlGaAs (λ=864 nm) asymmetric Fabry-Perot modulators with ≈37 GHz modulation frequency response, comparable to the fastest waveguide modulators. The modulation response saturates at high optical powers due to saturation of the excitonic absorption and heating effects, but the frequency response is independent of the incident optical intensity, since it depends only on the RC time constant, and not on the carrier transit time. The device design takes advantage of the fact that the quantum-confined Stark effect is more pronounced at some distance from the absorption edge to achieve a modulator with ⩾20 dB contrast and ≈3 dB insertion loss for ±2 V operating voltage, but only 21 fF capacitance. The DC bias used to move the operating point off the absorption edge has the additional benefits of improving the linearity and chirp of the device, as well as the saturation intensity. Here we present measurements of the modulation and photocurrent responses of the modulators, calculate the RC and transit times for the device, analyze the saturation mechanisms, and discuss the linearity and chirp of the device from the perspective of a high-speed digital optical communications system