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排序方式: 共有1508条查询结果,搜索用时 651 毫秒
1.
Windlass H. Raj P.M. Balaraman D. Bhattacharya S.K. Tummala R.R. 《Electronics Packaging Manufacturing, IEEE Transactions on》2003,26(2):100-105
Polymer ceramic composites form a suitable material system for low temperature fabrication of embedded capacitors appropriate for the MCM-L technology. Improved electrical properties such as permittivity can be achieved by efficient filling of polymers with high dielectric constant ceramic powders such as lead magnesium niobate-lead titanate (PMN-PT) and barium titanate (BT). Photodefinable epoxies as the matrix polymer allow fine feature definition of the capacitor elements by conventional lithography techniques. The optimum weight percent of dispersant is tuned by monitoring the viscosity of the suspension. The dispersion mechanism (steric and electrostatic contribution) in a slightly polar solvent such as propylene glycol methyl ether acetate (PGMEA) is investigated from electrophoretic measurements. A high positive zeta potential is observed in the suspension, which suggests a strong contribution of electrostatic stabilization. By optimizing the particle packing using a bimodal distribution and modified processing methodology, a dielectric constant greater than 135 was achieved in PMN-PT/epoxy system. Suspensions are made with the lowest PGMEA content to ensure the efficiency of the dispersion and efficient particle packing in the dried film. Improved colloidal processing of nanoparticle-filled epoxy is a promising method to obtain ultra-thin capacitor films (<2/spl mu/m) with high capacitance density and improved yield. Capacitance of 35 nF/cm/sup 2/ was achieved with the thinnest films (2.5-3.0 /spl mu/m). 相似文献
2.
Seo K. Heiblum M. Knoedler C.M. Oh J.E. Pamulapati J. Bhattacharya P. 《Electron Device Letters, IEEE》1989,10(2):73-75
A high-gain ballistic hot-electron device is described. The GaAs-AlGaAs heterostructure device, with a 21-mm-thick pseudomorphic In 0.12Ga0.88As base, had a current gain of 27 at 77 K and 41 at 4.2 K. As characteristically seen in ballistic devices, transfer into the L valley limited the maximum gain. The Γ-L valley separation in the strained In0.12Ga0.88As was estimated to be about 380 meV 相似文献
3.
Yuan Y. Jambunathan R. Singh J. Bhattacharya P. 《Quantum Electronics, IEEE Journal of》1997,33(3):408-415
The performance characteristics of a coupled cavity InGaAsP-InP MQW laser/active waveguide made by one-step epitaxy and well-controlled reactive ion etching (RIE) have been theoretically analyzed and experimentally determined. A theoretical model based on a finite-difference time-domain (FDTD) technique was used to simulate the propagation of an optical wave launched in the coupled system and determine the reflectivity of the facets created by RIE. The calculated effective reflectivity of the coupling region consisting of two facets and an air gap is between 0.45 and 0.55, which is in good agreement with the experimentally measured value of 0.5. The reflectivity of a single etched mirror derived from this value is estimated to be 0.3. A 120-μm-long monolithically integrated active waveguide when biased as a modulator and excited by the laser shows a maximum extinction ratio of 8 dB and a modulation bandwidth ⩾14 GHz at a dc bias of -0.5 V with a bias swing of 2 V 相似文献
4.
CV Tomy D Pal SS Banerjee S Ramakrishnan AK Grover S Bhattacharya MJ Higgins G Balakrishnan McK Paul 《Pramana》2002,58(5-6):925-935
The weakly pinned single crystals of the hexagonal 2H-NbSe2 compound have emerged as prototypes for determining and characterizing the phase boundaries of the possible order-disorder
transformations in the vortex matter. We present here a status report based on the ac and dc magnetization measurements of
the peak effect phenomenon in three crystals of 2H-NbSe2, in which the critical current densities vary over two orders of magnitude. We sketch the generic vortex phase diagram of
a weakly pinned superconductor, which also utilizes theoretical proposals. We also establish the connection between the metastability
effects and pinning. 相似文献
5.
Apurba Bhattacharya Nitin C. Patel Michael Peddicord Luca Parlanti John A. Grosso 《Tetrahedron letters》2006,47(30):5341-5343
An efficient, one-pot, phase transfer N-amination technology was developed. The protocol utilizes chloramine, an inexpensive and safe electrophilic aminating agent potentially viable for commercial manufacturing. 相似文献
6.
V Ravindran Pankaj Agrawal Rahul Basu Satyaki Bhattacharya J Blümlein V Del Duca R Harlander D Kosower Prakash Mathews Anurag Tripathi 《Pramana》2006,67(5):983-992
This is the report of the subgroup QCD of Working Group-4 at WHEPP-9. We present the activities that had taken place in the
subgroup and report some of the partial results arrived at following the discussion at the working group meetings. 相似文献
7.
Jayanta Basak Koustav Bhattacharya Santanu Chaudhury 《IEEE transactions on image processing》2006,15(12):3773-3783
In this paper, we design a content-based image retrieval system where multiple query examples can be used to indicate the need to retrieve not only images similar to the individual examples, but also those images which actually represent a combination of the content of query images. We propose a scheme for representing content of an image as a combination of features from multiple examples. This scheme is exploited for developing a multiple example-based retrieval engine. We have explored the use of machine learning techniques for generating the most appropriate feature combination scheme for a given class of images. The combination scheme can be used for developing purposive query engines for specialized image databases. Here, we have considered facial image databases. The effectiveness of the image retrieval system is experimentally demonstrated on different databases. 相似文献
8.
Shubneesh Batra Nanseng Jeng Akif Sultan Kyle Picone Surya Bhattacharya Keun-Hyung Park Sanjay Banerjee David Kao Monte Manning Chuck Dennison 《Journal of Electronic Materials》1993,22(5):551-554
When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal
budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface
to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon
substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the
leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in
the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection
from the interface. 相似文献
9.
The effect of interface-roughness-related disorder on the electronic and optoelectronic properties of a quantum wire structure are studied. It is seen that the disorder causes strong localization in the quasi-one-dimensional system. While the electronic states are seriously perturbed, the density of states is not affected drastically. Optoelectronic properties as reflected in the interband transition related phenomenon are not found to suffer significant deterioration as a result of the disorder. However, the results suggest that intraband relaxation processes may be seriously affected because of electron (hole) states being localized in different regions of the wire 相似文献
10.
It is shown how the traditional method of neglecting the energy of acoustic phonons and approximating their distribution by the equipartition law leads to significant errors in the phonon growth rate in a many-valley model semiconductor when the lattice temperature is low. 相似文献