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1.
A variable-gain amplifier with very low power consumption and wide tuning range is presented. The operational principle of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by simulation in TSMC 0.18-μm N-well CMOS fabrication process. Owing to the novel zero-pole repositioning technique, the proposed circuit demonstrates very high frequency bandwidth of 79 MHz while drawing only 0.52 mA from 1.8 V power supply. The interesting results such as a very small core area of about 0.0025 mm2 as well as a wide linear-in-dB and constant-bandwidth tuning range of 68.2 dB along with a very low power consumption of 0.95 mW are achieved utilizing standard CMOS technology. The stability of the proposed VGA is verified through transient sinusoidal response analysis. Full process, voltage and temperature (PVT) variation analysis of the circuit is also investigated through Monte Carlo and corner case analysis in order to approve the robustness of the structure. Monte Carlo simulations show standard deviation values of 4.6 dB and 78.3 MHz in gain and gain-bandwidth product, respectively. These results show that our zero-pole repositioning method would lend itself well for use in low-power and high-frequency applications, especially in high-speed automatic gain control amplifiers.  相似文献   
2.
A programmable high-speed source-series-terminated driver with signal boost capability is presented. The driver uses only one main input data tap and is divided into main units and auxiliary units. A passive high pass filter is utilized to detect data transitions and control the inputs of the auxiliary units to enable a programmable amplitude boost for the output signal. The corner frequency of the high pass filter is adjusted depending on the data rate. Further, the amount of the high frequency signal boost can be adjusted depending on the loss of the channel. HSPICE simulations are used to demonstrate the performance of the driver at 10, 20 and 40 Gbps data rates. At 40 Gbps, the driver is capable of equalizing a PRBS9 data pattern signal through a channel that has a loss of 9 dB. At worst case conditions and 40 Gbps date rate, the driver achieves a differential eye-opening amplitude of 201 mVppd and an eye-opening of 0.952 UI. The driver is designed using 28 nm CMOS process and uses a nominal 1 V supply voltage. It consumes a maximum of 12 mW of at-speed power.  相似文献   
3.
A current operational amplifier (COA) with very high current drive capability is presented in this paper. The principle of operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by HSPICE simulation in TSMC 0.18 μm CMOS, BSIM3, and Level49 technology. Owing to the elaborately arranged components, the proposed circuit demonstrates very high frequency bandwidth, extremely high CMRR, high output impedance, and true rail to rail output voltage swing range while operating at very low power supply of ±0.5 V. The interesting results such as current drive capability of ±1 mA, high output impedance of 5 GΩ, wide gain bandwidth of 220 MHz, extremely high output voltage swing of ±0.45 V, which interestingly provides the highest yet reported output voltage compliance for current mode building blocks implemented by regular CMOS technology, low static power consumption of 159 μW, and very high CMRR of 155 dB is achieved utilizing standard CMOS technology. Full process, voltage, and temperature variation analysis of the circuit is also investigated in order to approve the well robustness of the structure. The transient stepwise and sinusoidal response analysis is also done to verify the proposed COA stability.  相似文献   
4.
Analog Integrated Circuits and Signal Processing - In the present study, a low-power high-precision current-mode CMOS true root mean square (RMS)-to-DC converter is presented based on the...  相似文献   
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6.
In this paper a novel ultra-high compliance, low power, very accurate and high output impedance current mirror/source is proposed. Deliberately composed elements and a good combination (for a mutual auto control action) of negative and positive feedbacks in the proposed circuit made it unique in gathering ultra-high compliances, high output impedance and high accuracy ever demanded merits. The principle of operation of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by HSPICE simulation in TSMC 0.18 μm CMOS, BSIM3 and Level49 technology. Simulation results with 1 V power supply and 8 μA input current show an input and output minimum voltages of 0.058 and 0.055 V, respectively, which interestingly provide the highest yet reported compliances for current mirrors implemented by regular CMOS technology. Besides an input resistance of 13.3 Ω, an extremely high output resistance of 34.3 GΩ and −3 dB cutoff frequency of 210 MHz are achieved for the proposed circuit while it consumes only 42.5 μW and its current transfer error (at bias point) is the excellent value of 0.02%.  相似文献   
7.
A novel low power and low voltage current mirror with a very low current copy error is presented and the principle of its operation is discussed.In this circuit,the gain boosting regulated cascode scheme is used to improve the output resistance,while using inverter as an amplifier.The simulation results with HSPICE in TSMC 0.18 μm CMOS technology are given,which verify the high performance of the proposed structure.Simulation results show an input resistance of 0.014 Ω and an output resistance of 3 GΩ.The current copy error is favorable as low as 0.002% together with an input (the minimum input voltage of vin,min~ 0.24 V) and an output (the minimum output voltage of vout,min~ 0.16 V) compliances while working with the 1 V power supply and the 50 μA input current.The current copy error is near zero at the input current of 27 μA.It consumes only 76 μW and introduces a very low output offset current of 50 pA.  相似文献   
8.
A true class ‘AB’ fully differential current output stage with very high common mode rejection ratio is presented in this study. The operational principle of this unique structure is discussed, its most important formulas are derived and its outstanding performance is verified by SPICE simulation in TSMC 0.18 μm CMOS, and Level49 technology. Owing to the elaborately arranged components, the proposed circuit demonstrates very high common-mode rejection ratio (CMRR), high slew rate, high current drive capability, high output compliance, and very low power consumption while operating at power supply of ±0.9 V. The interesting results such as current drive capability of ±100 μA, high output voltage swing of ±0.8 V, low static power consumption of 21 μW, and very high CMRR of 84.5 dB is achieved utilizing standard CMOS technology. The performance of circuit at the presence of process and voltage variations evaluated through corner case and Monte Carlo analysis. The harmonic distortion is evaluated to investigate the circuit’s linearity. The transient stepwise response analysis is also done to verify the stability of proposed class ‘AB’ FDCOS.  相似文献   
9.
A novel CMOS atto-ampere current mirror (AACM) is proposed which reaches the minimum yet reported current range of 0.4 aA. Operation of this circuit is based on the source voltage modulation instead of the conventionally used gate voltage modulation which interestingly prevents usage of commonly required voltage shifting in those circuits. The proposed circuit has a simple structure prohibiting large chip area consumption which consumes extremely low power of 1.5 μW. It is thus the best choice for ultra low power low voltage (ULPLV) applications. By using a very simple frequency compensation technique, its bandwidth is widened to 15.8 kHz. Simulation results in SMIC (Semiconductor Manufacturing International Corporation) 0.18 μm CMOS technology with Hspice are presented to demonstrate the validation of the proposed current mirror.  相似文献   
10.
In this paper a novel low input impedance current mirror/source is proposed. The principle of its operation compared to that of the simple current mirror is discussed. Also are given the comparative simulation results with HSPICE in TSMC 0.18 μm CMOS which verify the theoretical formulation and operation of the proposed structure. Simulation results show an input resistance for the proposed current mirror about 0.006 Ω. This is 4 × 105 times lower than that of the simple one while both working with 1.5 V supply and 50 μA bias current. It consumes only 161 μW and exhibits an excellent current error value of Zero at 55 μA which remains below 0.6% up to 100 μA. Favorably its minimum output voltage is reduced to 0.2 V.  相似文献   
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