用于高压ESD防护的高维持电流SCR器件

静电释放(ESD)是指电荷在两个电势不等的物体之间转移的物理现象,它存在于人们日常工作生活的任意环节。随着集成电路特征尺寸不断减小、集成度不断增高,芯片对ESD也变得越来越敏感。为了用尽可能小的版图面积来实现ESD防护,利用晶闸管结构(SCR)来实现集成电路的ESD防护已成为当下的研究热点。但传统SCR的维持电压和维持电流都很低,若直接将其应用于电源ESD防护则会导致严重的闩锁效应(latch-up)。基于高维持电流设计窗口,提出一种可用于15 V电路的抗闩锁SCR器件,并通过混合仿真验证了该器件的有效性。     

High holding voltage SCR for robust electrostatic discharge protection

A novel silicon controlled rectifier(SCR) with high holding voltage(Vh) for electrostatic discharge(ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vhby adding a long N+ layer(LN+) and a long P+ layer(LP+), which divide the conventional low voltage trigger silicon controlled rectifier(LVTSCR) into two SCRs(SCR1: P+/Nwell/Pwell/N+ and SCR2: P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current(IESD), the two SCRs are turned on at the same time to induce the first snapback with high V_h(V_(h1)). As the IESDincreases, the SCR2 will be turned off because of its low current gain. Therefore, the IESDwill flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high V_h(V_(h2)). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like(Transmission Line Pulse-like) simulation. An optimized V_(h2) of 7.4 V with a maximum failure current(I_(t2)) of 14.7 m A/μm is obtained by the simulation.     

一种自适应时间常数匹配Gm-C电感电流采样方法

提出了一种自适应时间常数匹配G_m-C电感电流采样方法。该方法通过比较Buck变换器SW点电压的过零时间与G_m-C滤波采样电压的过零时间,判断G_m-C时间常数是否与DCR时间常数匹配。使用鉴频鉴相器检测二者过零时间差,并控制双向计数器,实现对电容阵列等效容值的调制,最终实现自适应时间常数匹配G_m-C电感电流采样。与前序工作相比,该校准过程平滑,并且可以在DC-DC变换器正常工作情况下进行在线调制,能有效适应DC-DC变换器工作中温度、电压、电流等外部条件的变化。