Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.     

聚酰亚胺/聚丙烯腈共混黑膜的制备及其结构与性能

采用共混的方法制备聚酰胺酸/聚丙烯腈(PAA/PAN)共混溶液.其中2种PAA溶液分别由二酐(3,3′,4,4′-联苯二酐(BPDA)与均苯四甲酸二酐(PMDA))和二胺(对苯二胺(PDA)与4,4′-二氨基二苯醚(ODA))均聚或共聚而得,N,N-二甲基乙酰胺(DMAc)为溶剂,PAN溶于DMAc中制成溶液后与PAA溶液混合,涂膜后热处理制得聚酰亚胺(PI)/PAN共混薄膜.分析了PAA和PAN在热处理过程中的变化,以及PAN的加入量对共混薄膜的结构与性能的影响.结果表明,在热处理过程中,PAA完成了亚胺化成为PI,而PAN完成了预氧化,形成了稳定的梯形结构,制备出具有良好力学性能、黑色、不透光的薄膜,但是随着PAN含量的增加,体系发生明显的相分离,薄膜力学性能有所下降,(BPDA/PDA/ODA)PI中加入10%的PAN和(PMDA/ODA)PI中加入20%的PAN时能获得具有良好力学性能的黑色、低透光率的薄膜.     

Nonpolar a-plane light-emitting diode with an in-situ SiNx interlayer on r-plane sapphire grown by metal-organic chemical vapour deposition

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiN_x interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiN_x interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm²/(V·s) and 460 Ω/口 respectively. Owing to the significant effect of the SiN_x interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.     

原位一步法制备BTDA/4,4′-ODA/4,4′-SDA 聚酰亚胺表面银化薄膜

采用原位一步自金属化的方法制备了具有反射性和导电性的表面银(Ag)化的聚酰亚胺(PI)薄膜,PI是由一种二酐(3,3′,4,4′-四羧基二苯酮酐,BTDA)和两种二胺(4,4′-二氨基二苯醚,4,4′-ODA与4,4′-二氨基二苯硫醚,4,4′-SDA)三元共聚而得,系统研究了4,4′-SDA的引入对薄膜性能及相态结构的影响.结果表明,4,4′-SDA的加入有助于银的还原和迁移,并利于薄膜导电性的提高,薄膜的反射率在两种二胺单体4,4′-ODA与4,4′-SDA的摩尔比为1比1时达到最佳.     

聚酰亚胺作为锂离子电池硅基负极粘结剂的研究进展

硅基负极材料是提升锂离子电池能量密度的重要材料基础,负极粘结剂性能的优劣是影响硅基负极材料推广应用的关键因素。本文全面综述了锂离子电池负极粘结剂材料的研究及应用进展,详细阐述了粘结剂对于硅基负极材料及锂离子电池电化学性能的影响,简要介绍了目前常用的羧甲基纤维素(CMC)、聚丙烯酸(PAA)、海藻酸盐(Alg)三种硅基负极粘结剂的特点,重点讨论了聚酰亚胺(PI)材料作为负极粘结剂的优势,其分子结构可设计、形变可逆、高强高模等优点有望抑制硅基负极体积膨胀并避免颗粒粉化,系统综述了目前PI在硅基负极粘结剂中的研究进展。在此基础上,为PI粘结剂后续研究提供了新的方法策略,为锂离子电池负极粘结剂的开发和应用提供了新的设计理念。     

具有高表面反射性和导电性的聚酰亚胺-银复合薄膜的制备

聚酰亚胺-银的复合薄膜以其表面银层无与伦比的反射性和电导率,再加上聚酰亚胺基体本身优异的热稳定性和物理机械性能,以及其轻质和柔性的特点,在航空航天和微电子等许多领域具有广阔的应用前景,成为近年来广泛研究的多功能材料之一。本文对比了当前用于制备表面金属化的聚酰亚胺薄膜的各种方法及其优缺点,包括外部沉降法、超临界流体法、原位一步自金属化法、表面改性离子交换自金属化法和直接离子交换自金属化法,特别总结了由本课题组近年来所发展起来的表面改性离子交换自金属化法和直接离子交换自金属化法在制备高反射高导电的双面银化的聚酰亚胺薄膜方面所取得的研究进展。这两种方法均基于简单的银盐化合物前驱体即可实现双面高反射高导电的表面银化的聚酰亚胺薄膜的制备,过程简单,成本低廉。所制得的聚酰亚胺-银复合薄膜的表面反射率超过100%,表面电阻接近纯金属银的水平;复合薄膜的表面银层与聚合物基体之间有很优异的粘结性能;且很好地保持了母体聚酰亚胺薄膜优异的机械性能和热性能。其中采用直接离子交换自金属化技术,仅需将聚酰亚胺的预聚体薄膜在极稀的银盐水溶液中(0.01M银氨溶液)处理5min,然后热处理即可实现聚酰亚胺薄膜的双面金属化,是目前效率最高和银利用率最高的方法。     

原位一步法制备PMDA/ODA基PI/Ag复合薄膜

采用PMDA／0DA-AgAc／TFAH体系,用原位一步法制备了具有一定反射性和导电性的表面银膜化的PI／Ag复合薄膜,并对影响薄膜制备的各种因素以及薄膜亚微相态与其性能之间的关系进行了研究。实验中wAg=0．13的薄膜反射率达29．5％,而且经过轻微抛光后具有了导电性,表面电阻率为100Ω／sq。同时,金属化后的复合薄膜很好地保持了母体聚酰亚胺的机械性能。     

InGaN/GaN多量子阱LED电致发光谱中双峰起源的研究

研究了MOCVD生长的具有双发射峰结构的InGaN/GaN多量子阱发光二极管(LED)的结构和发光特性.在透射电子显微镜(TEM)下可以发现量子阱的宽度不一致,电致发光谱(EL)发现了位于2.45eV的绿光发光峰和2.81eV处的蓝光发光峰.随着电流密度增加,双峰的峰位没有移动,直到注入电流密度达到2×104 mA/cm2时,绿光发光峰发生蓝移,而蓝光发光峰没有变化.单色的阴极荧光谱(CL)发现绿光发射对应的发光区包括絮状区域和发光点,而蓝光发射对应的发光区仅包含絮状区域.通过以上的结果,我们认为蓝光发射基本上源于InGaN量子阱发光,而绿光发射则起源于量子阱和量子点的发光.     

空间电子对抗技术的现状及发展趋势

从空间电子对抗技术的三个方面：空间电子情报侦察保障技术、空间电子攻击技术和空间电子防御技术入手，结合当前各国的航天、电子技术发展状况，对空间电子对抗技术的现状和发展趋势进行了较为深入、详细的论述。     

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours’ current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensi- ties under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode.