MPLS VPN技术在电力企业广域网中的应用

为实现电力企业双网隔离的要求,从MPLS VPN原理入手,结合滁州电力系统信息网络实际情况,构建了从网络核心层、汇聚层到接入层的安全管理体系。介绍了MPLS VPN技术的基本原理。实际应用表明,MPLS VPN既可将现有网络划分成逻辑上隔离的网络,实现各个业务系统之间的隔离,又可以将企业信息外网与信息内网的灵活、高效、安全结合起来,为用户提供高质量的网络服务。     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

事件触发下网络控制系统的动态输出反馈控制

研究了基于事件触发的网络控制系统(NCSs)的动态输出反馈控制(DOFC).通过综合考虑NCSs中的网络诱导延迟和时序错乱的问题,建立了包含事件触发机制和DOFC的闭环模型.与传统的静态控制不同,DOFC可以忽略极点配置受限的问题,增加系统的适应性范围.仿真结果验证了所提出的事件触发机制和DOFC的有效性.     

一种用于台面探测器的新型电极结构

提出一种用于台面探测器的新型电极结构.该结构通过在台面底部两次制备电极而获得接力电极.同传统的引出电极结构相比,这种接力电极结构不仅简化了从台面底部引出电极的工艺,而且能够增加台面顶部空间从而更有利于其它工艺的进行以及工艺集成.在200 W超声处理5分钟后,接力电极的高度和形貌都未发生变化.从倒焊互连的剖面SEM照片可以看出台面底部的接力电极是个整体,并且该接力电极结构完全可以应用在台面探测器中.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

基于模糊层次分析法的计算机网络安全评价探析

计算机网络技术已经广泛的应用到人们的生活和工作中,计算机网络安全则是计算机网络事业良好发展的基础,其中计算机网络安全评价至关重要。基于以上,本文以模糊层次分析法为基础,探讨了基于模糊层次分析发的计算机网络安全评价。     

基于Al2O3/Pt纳米晶/HfO2叠层的MOS电容存储效应研究

采用电子束蒸发Pt和后快速热退火的方法,研究了退火条件对Pt纳米晶的生长特性的影响,结果显示Pt纳米晶的密度随退火温度的升高和退火时间的延长均表现出先增大后减小的趋势.在800℃下退火20 s能得到分布均匀的、密度为30×10¹¹ cm^-2的Pt纳米晶.进一步研究了基于Al₂O₃/Pt纳米晶/HfO₂叠层的MOS电容结构的存储效应,表明其在-3—+8 V扫描电压范围下C-V< 关键词： Pt纳米晶 快速热退火 原子层淀积 存储效应     

信息交换机电源系统设计及运行维护

在设计信息交换机电源系统之前,必须对电源系统的正常工作条件、工作流程、设备性能及其组成有充分的了解,消除事故隐患,确保通讯系统运行的可靠性和安全性,满足通讯事业快速进步和发展的相关需求.本文旨在设计更为合理的信息交换机电源系统,使信息交换机的成本降低,且具有较高的可靠性,更为方便实用,旨在相关人员参考.     

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.     

High density Al2O3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.