Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

In this paper,we investigate the performance of the bulk fin field effect transistor(FinFET) through a threedimensional(3D) full band Monte Carlo simulator with quantum correction.Several scattering mechanisms,such as the acoustic and optical phonon scattering,the ionized impurity scattering,the impact ionization scattering and the surface roughness scattering are considered in our simulator.The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work.Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.     

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

We demonstrate a two-dimensional(2D) full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations(BTE).The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport...     

异质结构中载流子输运的二维自洽全能带系综蒙特卡罗模拟

本文展示了一个用于异质结构模拟的二维全能带系综蒙特卡罗 模拟器,它通过自洽求解二维泊松和波尔兹曼方程,同时处理 了载流子在两种不同半导体材料以及其其界面处的输运。本文 给出了该蒙特卡罗模拟器的内部结构,包括通过赝势方法计算 得到全能带结构、包含的不同散射机制和对载流子在两种不同 半导体材料边界输运的适当处理。作为验证,我们对两种不同 掺杂的Si-Ge异质结—p-p同型异质结和n-p异型异质结进行了 模拟,给出了其I-V特性以及电势和载流子浓度分布,这些结果 验证了我们的异质器件蒙特卡罗模拟器的有效性。     

用三维蒙特卡罗模拟栅-源/漏不对准对体硅FinFET器件性能的影响

We investigate the influence of gate-source/drain(G-S/D) misalignment on the performance of bulk fin field effect transistors(FinFETs) through the three-dimensional(3D) full band Monte Carlo simulator.Several scattering mechanisms,such as acoustic and optical phonon scattering,ionized impurity scattering,impact ionization scattering and surface roughness scattering are considered in our simulator.The influence of G-S/D overlap and underlap on the on-states performance and carrier transport of bulk FinFETs are mainly discussed in our work.Our results show that the on-states currents increase with the increment of G-D/S overlap length and the positions of a potential barrier and average electron energy maximum vary with the G-D/S overlap length.The carrier transport phenomena in bulk FinFETs are due to the effect of scattering and the electric field in the overlap/underlap regime.