排序方式: 共有9条查询结果,搜索用时 15 毫秒
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富含纤维素类农作物秆与丙烯酸接枝共聚制备高倍率吸水树脂 总被引:2,自引:1,他引:2
用棉花秆、麦秆和玉米秆等富含纤维素类农作物秆与丙烯酸接枝共聚制备了高倍率的吸水树脂. 研究了不同水质(去离子水、自来水及雨水)对接枝产物吸水性能的影响. 采用棉花秆、麦秆、玉米秆与丙烯酸的接枝产物对去离子水的吸水倍率分别为930, 790和630 g/g, 对自来水的吸水倍率分别为670, 350和250 g/g, 用玉米秆/地瓜淀粉混合物制备的接枝产物对雨水的吸水倍率为540 g/g. 为棉花秆、 麦秆及玉米秆等富含纤维素的农作物秆的深加工与应用开辟了一条途径. 相似文献
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In this paper, the self-compliance bipolar resistive switching characteristic of an HfO_2-based memory device with Ag/HfO_2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage. 相似文献
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Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiOx/W structure with self-rectifying property is demonstrated for write-once-read-many-times(WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state(LRS) permanently with a rectification ratio as high as 104 at ±1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiOx/W interface and the Schottky contact at Pt/TiOx interface. The results in this paper demonstrate the potential application of TiOx-based WORM memory device in crossbar arrays. 相似文献
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SAR散射波干扰实现方法的研究 总被引:4,自引:0,他引:4
根据SAR信号的传播过程和散射波干扰原理,提出了一种散射波干扰的实现方法——干扰机转发地物散射波干扰,即干扰机接收到经地物散射的SAR信号,向SAR接收系统转发,形成散射波干扰。通过分析干扰信号的数学模型,证明了干扰机转发地物散射波干扰信号与干扰机转发SAR信号散射波干扰信号具有相同的数学模型,且能够在距离向和方位向实现二维相干干扰,使SAR图像模糊。最后通过计算机仿真验证了干扰机转发地物散射波干扰的干扰效果。 相似文献
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