Alkaline barrier slurry applied in TSV chemical mechanical planarization

We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME     

碱性铜抛光液在300mm平坦化系统中CMP工艺优化的研究

CMP process optimization for bulk copper removal based on alkaline copper slurry was performed on a 300 mm Applied Materials Reflexion LK system. Under the DOE condition, we conclude that as the pressure increases, the removal rate increases and non-uniformity is improved. As the slurry flow rate increases, there is no significant improvement in the material removal rate, but it does slightly reduce the WIWNU and thus improve uniformity. The optimal variables are obtained at a reduced pressure of 1.5 psi and a slurry flow rate of 300 ml/min. Platen/carrier rotary speed is set at a constant value of 97/103 rpm. We obtain optimized CMP characteristics including a removal rate over 6452 A/min and non-uniformity below 4% on blanket wafer and the step height is reduced by nearly 8000 A/min in the center of the wafer on eight layers of copper patterned wafer, the surface roughness is reduced to 0.225 nm.