Ti/WSi/Ni ohmic contact to n-type SiCN

Ti/WSi/Ni contact to n-type SiCN was investigated using the circular transmission line method. Current–voltage characteristics, X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the contacts before and after annealing. It is shown that the conducting behavior of the contacts is dependent on the annealing temperature. After annealing at 900 ℃ or above, ohmic contacts with specific contact resistivity were achieved. The 1000-℃-annealed contact exhibits the lowest specific contact of 3.07E-5 Ω? cm2. The formation of ohmic contact with low specific contact resistivity was discussed.     

DISSOLUTION OF IRON TO COPPER IN Fe60Cu40 ALLOY BY MECHANICAL ALLOYING AND SUBSEQUENT DECOMPOSITION

A metastable alloy with composition Fe₆₀Cu₄₀ can be prepared in single phase of a fcc structure by mechanical alloying, although Fe-Cu system is virtually immiscible in its equilibrium state at ambient temperature. The M?ssbauer spectra of this supersaturated solid solution could be fitted by two subspectra whose hyperfine magnetic fields are 200 kOe and 250kOe. In this metastable alloy, the iron atoms at the interface are easy to form clusters characterized as α-Fe at a temperature below 250℃, whereas the iron atoms in the body will cluster together at a higher temperature above 350℃ and behave as γ-Fe, and then transform to ferromagnetic bcc iron occurs.     

高能球磨和低温烧结制备高电位梯度ZnO厚膜压敏电阻

通过高能球磨和低温烧结,制备出高电位梯度的ZnO厚膜压敏电阻,并研究了烧结温度对厚膜试样电学性能的影响.结果表明,高能球磨可显著细化粉体颗粒,球磨后颗粒的平均尺寸减小到0.420μm;颗粒的高度细化促使厚膜可在650-850℃的低温范围烧结成瓷,其中在700℃的烧结条件下,厚膜试样的综合性能最佳,电位梯度达到3175.6 V·mm-1,漏电流为30.7μA,非线性系数为13,微观势垒高度为0.79eV,耗尽层宽度为14.4nm,施主浓度为2.24×1018cm-3,表面态密度为3.22×1012cm-2.     

纳米巨磁阻抗效应与磁敏传感器

利用纳米微晶巨磁阻抗效应研制的一种新型磁敏传感器已被开发.它与传统的磁通门、霍尔和磁电阻传感器相比具有灵敏度高、温度稳定性好、使用寿命长等优点,已分别应用于汽车测速、电喷发动机点火和其他工业自动化控制等方面.     

在Si(100)上以AlN作过渡层低温外延生长ZnO薄膜

采用脉冲激光沉积(PLD)方法在Si(100)上成功生长了高度c轴取向的AlN薄膜,并以此为衬底,实现了ZnO薄膜的低温准外延生长.通过X射线衍射(XRD)、原子力显微镜(AFM)以及荧光分光光度计表征ZnO薄膜的结构、表面形貌和发光性能.结果表明,ZnO薄膜能在AlN过渡层上沿c轴准外延生长,采用AlN过渡层后,其荧光强度也有大幅提高.     

DISSOLUTION OF IRON TO COPPER IN Fe60Cu40 ALLOY BY MECHANICAL ALLOYING AND SUBSEQUENT DECOMPOSITION

A metastable alloy with composition Fe₆₀Cu₄₀ can be prepared in single phase of a fcc structure by mechanical alloying, although Fe-Cu system is virtually immiscible in its equilibrium state at ambient temperature. The M?ssbauer spectra of this supersaturated solid solution could be fitted by two subspectra whose hyperfine magnetic fields are 200 kOe and 250kOe. In this metastable alloy, the iron atoms at the interface are easy to form clusters characterized as α-Fe at a temperature below 250℃, whereas the iron atoms in the body will cluster together at a higher temperature above 350℃ and behave as γ-Fe, and then transform to ferromagnetic bcc iron occurs.     

新型Zr-Ti-Cu-Ni-Be-Fe大块非晶合金的形成及性能 *

报道了新型块状、高强度Zr-Ti-Cu-Ni-Be-Fe非晶合金的形成及物性的研究结果 ,研究了铁原子组元对Zr-Ti-Cu-Ni-Be-Fe大块非晶形成能力、硬度、磁化率及热稳定性的影响 ,探讨了铁在这种大块非晶合金形成中所起的作用 .     

纳米巨磁阻抗效应与磁敏传感器

利用纳米微晶巨磁阻抗效应研制的一种新型磁敏传感器已被开发，它与传统的磁通门、霍尔和磁电阻传感器相比具有灵敏度高、温度稳定性好、使用寿命长等优点，已分别应用于汽车测速、电喷发动机点火和其他工业自动化控制等方面。     

PET上沉积Al掺杂ZnO薄膜的光电特性研究

采用脉冲激光沉积技术(PLD),室温下在柔性衬底PET上制备了高度c轴择优取向的Al掺杂ZnO薄膜.XRD分析表明,不同Al掺杂浓度的样品均呈现单一的ZnO相.荧光光谱和透射光谱分析显示,低温低氧压下制备的Al掺杂ZnO薄膜在紫光区域有很强的荧光发射,在可见光区域具有较高的透射率;并且可以通过Al掺杂浓度调节薄膜紫色发光强度和薄膜带隙.薄膜的电阻率随着Al掺杂浓度的增加先降低后增加,在掺杂浓度为3;原子分数时达到最小值.     

热处理对Ni0.7Zn0.3O薄膜结构及缺陷荧光特性的影响

采用脉冲激光沉积法在Si(100)衬底上制备了Ni0.7Zn0.3O薄膜,通过热处理改变薄膜的缺陷状态,并利用X射线衍射仪、扫描电子显微镜和荧光光谱仪表征薄膜的晶体结构、表面形貌和缺陷发光特性.结果表明:沉积态薄膜为立方结构的Ni0.7Zn0.3O单相,且沿着(200)面高度取向生长.经过热处理后,薄膜形成ZnO和Ni0.7Zn0.3O两相共存的镶嵌结构.样品具有非常丰富的室温荧光光谱,其发光峰主要来自Ni0.7Zn0.3O的缺陷能级跃迁,多缺陷能级导致了多发光峰的荧光光谱.热处理引起薄膜中缺陷的种类和浓度发生变化,严重影响其发光特性.