由背面工艺导致的3.3-kV NPT-IGBT阳极注入效率降低效应的实验研究

The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper. Wafer lifetimes are measured by a μ-PCD method, and well designed NPT-IGBTs with a final wafer thickness of 500 μm are fabricated. The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered. This indicates that anode injection efficiency reduction must be considered in the breakdown model. Furthermore, the parameters related to anode injection efficiency reduction are estimated according to the experimental data.     

应用于3.3kV IGBT的线性渐变掺杂结终端扩展的设计与优化

本文将线性渐变掺杂结终端扩展（LG-JTE）技术用于3.3kV IGBT并进行了试验验证。和采用多次光刻和离子注入传统结终端扩展技术不同,LG-JTE只用一张注入窗口宽度随与主结的距离线性变化的掩膜版。结合仿真设计了采用LG-JTE的IGBT,并在国内工艺平台上成功流片,其测试耐压达到3.7kV,接近理想的平行平面情形的耐压。     

SGNEC前工序工艺技术和未来发展

本文综述了亚微米、深亚微米集成电路工艺的主要特点、关键工艺及其实现方法，涉及高低压混载CMOS、DMOS、E^2PROM工艺。     

SGNEC前工序工艺技术和未来发展

本文综述了亚微米、深亚微米集成电路工艺的主要特点、关键工艺及其实现方法，涉及高低压混载CMOS、DMOS、E^2PROM工艺。     

Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

A linearly graded-doping junction termination extension(LG-JTE) for 3.3-kV-class insulated gate bipolar transistors(IGBTs) was proposed and experimentally investigated.Unlike conventional multi-implantation utilizing more than one photolithography step,a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure.Based on the simulation results,IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform.The fabricated devices exhibited a 3.7 kV forward-blocking voltage,which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3-kV-class IGBT in a domestic application.