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正The dry etching characteristic of Al_(1.3)Sb_3Te film was investigated by using a CF_4/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF_4/Ar ratio,the O_2 addition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of Al_(1.3)Sb_3Te thin films was investigated as a function of the CF_4/Ar ratio,the O_2 addition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF_4 concentration of 4%,power of 300 W and pressure of 80 mTorr. 相似文献
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We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact (W-BEC) array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage (I- V) measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state (HRS) to low-resistance state (LRS). In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application. 相似文献
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Novel Si3.5Sb2Te3 phase change material for phase change memory is prepared by sputtering of Si and Sb2Te3 alloy targets. Crystalline Si3.5Sb2Te3 is a stable composite material consisting of amorphous Si and crystalline Sb2Te3, without separated Te phase. The thermally stable Si3.5Sb2Te3 material has data retention ability (10 years at 412K) better than that of the Ge2Sb2Te5 material (10 years at 383 K). Phase change memory device based on Si3.5Sb2Te3 is successfully fabricated, showing low power consumption. Up to 2.2 × 107 cycles of endurance have been achieved with a resistance ratio lager than 300. 相似文献
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对使用CF4/Ar 混合气体刻蚀Al1.3Sb3Te的特性进行了研究。实验控制的参数是:气体流入刻蚀腔的速率,CF4/Ar 比例,O2的加入量,腔内压强以及加在底电极上的入射射频功率。总的气体流量是50sccm ,研究刻蚀速率与CF4/Ar的比例,O2加入量,腔内压强和入射射频功率的关系。最后刻蚀参数被优化。 使用优化的刻蚀参数CF4的浓度4%,功率300W,压强800mTorr,刻蚀速率达到70.8nm/min,刻蚀表面平整 相似文献
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