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Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under1-MeV electron irradiation
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In this work the degradation effects of the Ga_(0.7)In_(0.3)As(1.0 eV) and Ga_(0.42)In_(0.58)As(0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence(PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction(SJ) GaAs(1.41 eV) solar cell, the electrical properties(such as Isc, Voc, and Pmax)of the newly sub-cells degrade similarly as a function of log ?, where ? represents the electron fluence. It is found that the degradation of Voc is much more than that of Isc in the irradiated Ga_(0.42)In_(0.58)As(0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_(0.7)In_(0.3)As(1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the Jsc of the Ga_(0.7)In_(0.3)As(1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time(τeff) in the SJ Ga_(0.7)In_(0.3)As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus,the output current of Ga_(0.7)In_(0.3)As sub-cell should be controlled in the irradiated IMM4J cells. 相似文献
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掺杂浓度对多晶硅纳米薄膜应变系数的影响 总被引:11,自引:0,他引:11
为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型. 相似文献
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