十六氯酞菁锌有机半导体材料的合成及其气敏性研究

Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materials, hexadecachloro zinc phthalocyanine （ZnPcCl16） was synthesized. Components of the composite were analyzed by energy spectrum, and its functional group structures and absorption peaks were characterized by IR and UV-vis spectroscopy. The thin films of gas sensors were prepared in a vacuum evaporation system and evaporated onto SiO2 substrates, where sensing electrodes were made by MEMS micromachining. The optimal conditions for the films are： substrate temperature of 150 ℃ evaporation current of 95 A and film thickness of 50 nm. The result showed that the sensors were ideally sensitive to Cl2 gas and could detect the minimum concentration of 0.3 ppm.     

In基复合半导体氧化物Cl2敏感特性的研究

Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.     

Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl16

PANI/ZnPcCl_(16)(polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine) powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.The PANI/ZnPcCl_(16) films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine(Cl_2) gas.The results showed that powders prepared with a stoichiometric ratio of(ZnPc...     

聚苯胺/十六氯酞菁锌杂化有机半导体氯气传感器的研究

本文采用微加工技术在硅片上制作了铂金叉指电极,通过真空共蒸发沉积制备了聚苯胺/十六氯酞菁锌气敏薄膜,借助SEM对沉积膜进行了表征分析,并分析了氯气作用下影响该薄膜自身性能的相关因素,同时也对该传感器进行了气敏性能测试。实验结果表明：当聚苯胺与十六氯酞菁锌化学计量比为2：3时,薄膜对氯气有很好的敏感特性;最佳的蒸发沉积条件为基片温度160 ℃、蒸发温度425 ℃、薄膜厚度75 nm;提高工作温度(100 ℃以上)或增加气体浓度(100 ppm以上),均可以提高响应特性,但二者都将存在一个上限值。最后,我们也对该气敏薄膜的敏感机理进行了讨论。