超薄氮氧化硅(Sio_xN_y)栅NMOSFET中GIDL效应的研究

MOSFET栅介质层厚度的减薄使栅致漏极的泄漏（GIDL）电流指数增强，本文报道N2O中退火SiO2（两步法）生成超薄（5．5nm）氮氧化硅（SiOxNy）栅NMOSFET中的GIDL效应，包括器件尺寸、偏置电压和热载流子效应的影响．发现GIDL在一定的偏置下成为主要的泄漏机制，且陷阱电荷和界面态对其具有显著的调制作用．二维器件模拟结果指出，与SiO2栅NMOSFET相比，LDD掺杂结构使SiOxNy栅NMOSFET的GIDL进一步增强．     

芯片功耗限制对器件按比例缩小的影响

随着器件特征尺寸的不断缩小，电路功耗限制将对器件的进一步按比例缩小产生显著影响。文章在一些假设的前提下提出一简单物理模型对这一影响进行建模，并据此模型对开启电压变化时的影响作了分析。文中还对功耗管理和低温工作的作用进行了探讨。     

Unified MOSFET Short Channel Factor Using Variational Method

It is well known that short channel effect is one of the most important constraints that determine the downscaling of MOSFET's.The relationship between the device structure configuration and short channel effect is first expressed empirically in Ref.[1].And recently,due to...     

Unified MOSFET Short Channel Factor Using Variational Method

A new natural gate length scale for MOSFET's is presented using Variational Method. Comparison of the short channel effects is conducted for the uniform channel doping bulk MOSFET, intrinsic channel doping bulk MOSFET, SOI MOSFET and double gated MOSFET. And the results are verified by the 2D numerical simulation. Taken all the 2-D effects on front gate dielectric, back gate dielectric and silicon film into account, the data validity of electrical equivalent oxide thickness is investigated by this model, as shows that it is valid only when the gate dielectric constant is relatively small.     

一种基于电荷泵技术的界面态横向分布测量方法

本文以电荷泵技术为测量手段，结合数值计算，提出了一种新的测量界面态横向分布的方法．与传统方法相比具有理论模型较完善、测量中不引入新的蜕变、易于实现的特点，适用于研究短沟道器件的热载流子蜕变效应．用该方法对１．２μｍＬＤＤ结构ｎ－ＭＯＳＦＥＴ进行了研究，得到了应力后漏端附近产生的界面态的横向分布以及应力后阈值电压、平带电压的变化，并能确定由于热电子注入产生的氧化层陷阱电荷的数量和位置