中波碲镉汞p-on-n高温工作技术研究

针对碲镉汞中波p-on-n技术进行研究,采用二次离子质谱仪分析注入后及退火后As离子在碲镉汞材料中的浓度分布,使用透射电镜表征激活退火后离子注入损伤修复状态,通过半导体参数测试仪评价pn结的IV特性,将探测器芯片装在变温杜瓦中测试其不同温度下的焦平面技术指标。研究结果表明,As离子注入后在碲镉汞体内形成大量缺陷,经过富汞退火后缺陷得到修复,同时As离子进一步向内扩散,制备的pn结工作稳定表明As离子得到有效激活,制备的中波p-on-n探测器芯片在120 K温度下有效像元率可以达到99%以上。     

The light-enhanced NO₂ sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon(PS) is studied at room temperature with and without ultraviolet(UV) light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p +-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.     

The light-enhanced NO2 sensing properties of porous silicon gas sensors at room temperature

The NO2 gas sensing behavior of porous silicon（PS） is studied at room temperature with and without ultraviolet（UV） light radiation.The PS layer is fabricated by electrochemical etching in an HF-based solution on a p ＋-type silicon substrate.Then,Pt electrodes are deposited on the surface of the PS to obtain the PS gas sensor.The NO2 sensing properties of the PS with different porosities are investigated under UV light radiation at room temperature.The measurement results show that the PS gas sensor has a much higher response sensitivity and faster response-recovery characteristics than NO2 under the illumination.The sensitivity of the PS sample with the largest porosity to 1 ppm NO2 is 9.9 with UV light radiation,while it is 2.4 without UV light radiation.We find that the ability to absorb UV light is enhanced with the increase in porosity.The PS sample with the highest porosity has a larger change than the other samples.Therefore,the effect of UV radiation on the NO2 sensing properties of PS is closely related to the porosity.     

碲镉汞p型接触孔湿法腐蚀工艺研究

针对碲镉汞芯片p型接触孔湿法腐蚀工艺进行研究,采用不同条件的湿法腐蚀工艺完成碲镉汞p型接触孔制备,通过扫描电子显微镜和激光扫描显微镜分析腐蚀后的接触孔表面形貌,电学接触性能通过伏安特性曲线表征。实验结果表明,传统湿法腐蚀工艺在碲镉汞芯片接触孔制备过程中存在钻蚀严重和均匀性不好等问题,针对以上问题提出了一种超声辅助湿法腐蚀工艺,制备出形貌及均匀性较好的p型接触孔。