排序方式: 共有66条查询结果,搜索用时 31 毫秒
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声表面波滤波器的匹配电路设计 总被引:1,自引:0,他引:1
介绍了通过测试仪器采集的声表面波(SAW)滤波器的Sij(i,j=1,2)参数来优化匹配电路的方法。首先将采集的Sij(i,j=1,2)参数转换为SAW滤波器Yij(i,j=1,2)参数,然后建立新的S12(或S21)参数与匹配电路的依赖关系,通过优化匹配电路元件值,而使滤波器的插入损耗和通带波动满足目标值,该方法的主要优点是考虑整个通带特性,而不是考虑通带内的某一点(如中心频率)。 相似文献
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陈小兵 《电子产品维修与制作》2010,(16):84-84
键盘记录是获取准确信息的一种途径。键盘记录软件安装到系统后,会隐藏进程,隐藏窗口,记录系统中用户所执行的所有键盘操作,并将其所有记录保存到一个文件中。 相似文献
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陈小兵 《电子产品维修与制作》2010,(16):91-91
内网渗透在入侵检测时无疑是一种痛,是一个很难解决的问题。其实不然,完全可以使用另外一种方法来进行突破,例如nc命令。 相似文献
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本文讨论了声表面波压控(调频)振荡器的原理及设计方法,并实际制作了振荡器,中心频率为657MHz,频偏约为1.5×10~(-3),平均压控灵敏度为98kHz/V,线性度±2%,温度稳定度为±3.7×10~(-5)(-20—+60℃)。 相似文献
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脉冲激光沉积法制备高温压电薄膜0.20 BiInO$lt;sub$gt;3$lt;/sub$gt;-0.80PbTiO$lt;sub$gt;3$lt;/sub$gt;$lt;strong$gt;$lt;font color="#ff0000"$gt;$lt;font color="#ff0000"$gt;(已撤稿)$lt;/font$gt;$lt;/font$gt;$lt;/strong$gt; 下载免费PDF全文
采用脉冲激光沉积法制备了0.20BiInO3-0.80PbTiO3(20BI-PT)高温压电薄膜,并与0.15BiInO3-0.85PbTiO3(15BI-PT)样品进行了比较研究. X射线衍射谱显示,20BI-PT样品100峰出现了明显的劈裂,显示样品具有更高的四方对称性. FESEM图显示,20BI-PT样品中出现了部分111取向的三角形晶粒. 20BI-PT样品的铁电剩余极化(Pr)为~28 μC/cm2,矫顽场(Ec)为~120 kV/cm,相较15BI-PT样品,Pr略有增加,但同时Ec也有增加. 20BI-PT样品的横向压电系数(e31,f)约为–4.7±0.6 C/m2,和15BI-PT相比几乎一样. 介电温度谱显示,20BI-PT 样品的居里温度比15BI-PT增加了约30 ℃,达590 ℃,且介电峰没有明显的频率依赖性. Rayleigh分析显示,20BI-PT样品中内在本征因素及可翻转畴对介电非线性的贡献和15BI-PT基本相同,但是外在因素的贡献没有15BI-PT的贡献大,这可能和20BI-PT样品中晶粒111相对取向率较高有关.
关键词:
薄膜
脉冲激光沉积
铁电
压电 相似文献
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Structure, ferroelectric and dielectric properties of Bi2WO6 with different bismuth content 下载免费PDF全文
This paper reports that the Bi 2 WO 6 ferroelectric ceramics with excess Bi 2 O 3 of 0.0, 2.0, 3.5 and 5.0 wt.% of the stoichiometric composition are prepared by the conventional solid-state reaction method. Their microstructure, ferroelectric properties, the concentration and mobility of the defects have been analysed systematically. With increasing Bi content, the remnant polarization decreases, and the broken-down voltage increases. The optimum Bi excess, 3.5, lowers the oxygen vacancy concentration, while further Bi-addition brings about more defects. The activation energies fitted from cole-cole plots are 0.97 eV, 1.07 eV, 1.18 eV, and 1.33 eV, respectively. This suggests that the mobility of the defects is weakened by Bi-addition, which may be due to the increase of the ratio of the number of Bi 2 O 2 layers to that of the perovskite blocks. 相似文献
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Great enhancement in remnant polarization of SrBi4Ti4O15 thin films by A-site doping of Fe3+ ions 下载免费PDF全文
SrBi4-xFexTi4O15 (SBFT-x) thin films (x = 0.00, 0.05, 0.08, 0.15) have been synthesized on Pt/Ti/SiO2/Si (100) substrates by sol-gel method. This paper finds that Fe-doping does not change the crystal structure of SrBi4Ti4O15 (SBTi). The coercive filed (Ec) and remnant polarisation (Pr) increase at first, then decrease with the increase of Fe doping content. At a maximum applied field of 229 kV/cm, the 2Pr reaches a maximum value of 91.1 μC/cm2 at x = 0.05 and the corresponding Ec is 72 kV/cm. The 2Pr increases by about 260% and the Ec decreases by about 6%, respectively. Obviously, the ferroelectric property of SrBi4Ti4O15 is greatly enhanced by Fe doping. The fatigue-endurance characteristic of the SBFT-0.05 is not improved. After 1.1×109 read/write cycles at a frequency of 50 kHz, the nonvolatile polarisations (Pnv = P*-P∧) decreased about 48% of its initial value. 相似文献
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