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通过分析铯原子在σ+-σ-组态的圆偏振光照射下塞曼子能级的分布情况,构造铯原子在二维磁光阱(2D-MOT)中的受力模型,利用龙格-库塔方法求解铯原子的运动方程,实现原子束产生过程的三维模拟。得出原子束流量随小孔半径、铯原子蒸汽压、激光光强、激光失谐量、磁场梯度等的变化规律。与实验数据进行比较表明受力模型的正确性, 该方法能直观模拟原子束的产生,准确揭示原子束流量随各项参数的变化规律,为实验提供理论指导。 相似文献
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时间频率基准装置——铯原子喷泉钟, 在标准时间产生和保持、基础物理研究中发挥了重要的作用. 介绍了铯原子喷泉钟的工作原理, 对影响其性能的各项噪声源和频移项给出了分析, 影响频率稳定度性能的主要因素为Dick 效应相关的原子团装载时间、微波激励源相位噪声和探测激光的频率噪声, 影响频率不确定性能主要频移项为: 黑体辐射频移、冷原子碰撞频移、腔相位分布频移和微波泄露频移; 总结和比较了当前具有先进性能的铯原子喷泉钟采用的技术; 介绍了铯原子喷泉钟的主要应用方向、空间冷原子铯钟的研制情况和光学频率原子钟进展. 相似文献
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<正>A robust external cavity diode laser(ECDL) insensitive to mechanical vibration is built with an interference filter for selecting wavelength and a cat-eye reflector for light feedback.The free-running laser has a linewidth of 72 kHz.The laser frequency stability reaches 3×10~(-12) at 1-s integration time in terms of relative Allan variance based on the saturation absorption spectrum. 相似文献
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A high temperature AlN template was grown on sapphire substrate by metalorganic chemical vapor deposition.AFM results showed that the root mean square of the surface roughness was just 0.11 nm.Optical transmission spectrum and high resolution X-ray diffraction(XRD)characterization both proved the high quality of the AlN template.The XRD(002)rocking curve full width at half maximum(FWHM)was about 53.7 arcsec and(102)FWHM was about 625 arcsec.The densities of screw threading dislocations(TDs)and edge TDs wereestimated to be - 6 × 10^6 cm^-2 and - 4.7 ×10^9 cm^-2. AlGaN of Al composition 80.2% was further grown on the AlN template. The RMS of the surface roughness was about 0.51 nm. XRD reciprocal space mapping was carried out to accurately determine the Al composition and relaxation status in the AlGaN epilayer. The XRD (002) rocking curve FWHM of the AIGaN epilayer was about 140 arcsec and (102) FWHM was about 537 arcsec. The density of screw TDs was estimated to be - 4 × 10^7 cm^-2 and that of edge TDs was - 3.3 × 10^9 cm^-2. These values all prove the high quality of the AlN template and AlGaN epilayer. 相似文献
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冷原子团的高斯半径和温度是用来描述冷原子团,反映冷原子特性的主要参数.本文提出了一种新型的测量冷原子团高斯半径和温度的方法,采用过饱和近共振激光束照射冷原子团,原子由于吸收了光子动量偏离原来的运动轨道,而不能被探测系统所探测.根据冷原子团的原子分布规律,理论上构建了物理模型,通过改变作用于冷原子团的推除光的尺寸来控制被推除的冷原子数目,计算得到了不同高斯半径的冷原子团剩余原子数目与推除光尺寸的关系.以国家授时中心铯原子喷泉为实验平台,利用横向偏置的刀口光阑在不同下落高度控制作用于冷原子团的推除光尺寸,测量出不同高度的剩余原子数目随推除光尺寸的变化情况.应用理论公式拟合实验数据,最终得到冷原子团在磁光阱中心正下方10 mm和160 mm处的高斯半径分别为(1.54±0.05) mm和(3.29±0.08) mm,进一步计算得到冷原子团温度为(7.50±0.49)μK.为了验证刀口法的准确性和可重复性,在同一实验条件下用刀口法和飞行时间法对冷原子团温度进行了测量与对比,最终得到两种方法的测量结果基本一致. 相似文献
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Gallium nitride (GaN) based light emitting diodes (LEDs) with a thick and high quality ZnO film as a current spreading layer grown by metal-source vapor phase epitaxy (MVPE) are fabricated successfully. Compared with GaN-based LEDs employing a Ni/Au or an indium tin oxide transparent current spreading layer, these LEDs show an enhancement of the external quantum efficiency of 93% and 35% at a forward current of 20 mA, respectively. The full width at half maximum of the ZnO (002) ω-scan rocking curve is 93 arcsec, which corresponds to a high crystal quality of the ZnO film. Optical microscopy and atomic force microscopy are used to observe the surface morphology of the ZnO film, and many regular hexagonal features are found. A spectrophotometer is used to study the different absorption properties between the ZnO film and the indium tin oxide film of the GaN LED. The mechanisms of the extraction quantum efficiency increase and the series resistance change of the GaN-based LEDs with ZnO transparent current spreading layers are analyzed. 相似文献
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通过分析铯原子在σ~+-σ~-组态的圆偏振光照射下塞曼子能级的分布情况,构造铯原子在二维磁光阱(2D-MOT)中的受力模型,利用龙格-库塔方法求解铯原子的运动方程,实现原子束产生过程的三维模拟.得出原子束流量随小孔半径、铯原子蒸汽压、激光光强、激光失谐量、磁场梯度等的变化规律.与实验数据进行比较表明受力模型的正确性,该方法能直观模拟原子束的产生,准确揭示原子束流量随各项参数的变化规律,为实验提供理论指导. 相似文献