介质体电磁散射分析中的等效偶极矩法

在介质体电磁散射分析中,提出了一种基于等效偶极矩法的快速矩阵生成技术。该方法以矩量法和RWG基函数为基础,将源点处的电(磁)流等效为电(磁)偶极子,因而阻抗矩阵元素可以认为是源点电(磁)偶极子所产生的近区场与场点电流基函数之间的相互作用。这样等效偶极矩法避免了格林函数二重积分,使得阻抗矩阵元素的生成速度明显提高。数值结果表明该方法有较高的计算效率和精度。     

Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells

The silicon heterojunction (SHJ) solar cell has long been considered as one of the most promising candidates for the next-generation PV market. Transition metal oxides (TMOs) show good carrier selectivity when combined with c-Si solar cells. This has led to the rapid demonstration of the remarkable potential of TMOs (especially MoO_x) with high work function to replace the p-type a-Si:H emitting layer. MoO_x can induce a strong inversion layer on the interface of n-type c-Si, which is beneficial to the extraction and conduction of holes. In this paper, the radio-frequency (RF) magnetron sputtering is used to deposit MoO_x films. The optical, electrical and structural properties of MoO_x films are measured and analyzed, with focus on the inherent compositions and work function. Then the MoO_x films are applied into SHJ solar cells. When the MoO_x works as a buffer layer between ITO/p-a-Si:H interface in the reference SHJ solar cell, a conversion efficiency of 19.1% can be obtained. When the MoO_x is used as a hole transport layer (HTL), the device indicates a desirable conversion efficiency of 17.5%. To the best of our knowledge, this current efficiency is the highest one for the MoO_x film as HTL by RF sputtering.     

Hexagonal boron nitride hollow capsules with collapsed surfaces:Chemical vapor deposition with single-source precursor ammonium fluoroborate

SBA-15(mesoporous SiO_2) is used to stabilize and transfer F-in the NH_4BF_4 CVD reaction for the first time, and a large-scale crystalline h-BN phase can be prepared. We successfully fabricate hollow h-BN capsules with collapsed surfaces in our designed NH_4BF_4 CVD system. Optimum temperature conditions are obtained, and a detailed formation mechanism is further proposed. The successful SBA-15-assisted NH_4BF_4 CVD route is of importance and enriches the engineering technology in the h-BN single-source CVD reaction.