热处理对Ti-Mo-V-Nb-Al合金微观结构的影响

形状记忆合金由于其优良的超弹性和形状记忆效应而在医学上有着广泛的应用，其中由于NiTi形状记忆合金相较其它形状记忆合金具有更好的超弹性和生物相容性而得到了广泛的应用。但由于镍元素的毒性，使得开发一种生物相容性更好、无镍且具有良好力学性能的形状记忆合金成为必需。Ti-Mo-V-Nb-Al五元合金就是为此而开发的一种新型形状记忆合金。本研究用X射线衍射（XRD）、透射电子显微镜（TEM）和高分辨电子显微镜（HREM）研究了不同热处理条件对Ti-Mo-V-Nb-Al形状记忆合金微观结构的影响。     

用于单芯片系统的改进型WXGA LCoS成像器

本文讨论用于单芯片时序混色的菲利浦DD-720硅基液晶(LCoS)片。这种芯片主要用于HDTV背投影机和多媒体系统。与菲利浦以前的单片LCoS设计相比，由于该芯片具有电接口接点较少、封装简单和温度传感器内置等许多特点，使其应用于投影系统时成本降低。     

摩托罗拉8位HC08微控制器系列

摩托罗拉微控制器(MCU)具有编程语言简单、外围设备齐全、存储器模型用户友好、选择广及供应多、性能价格比高等优点,被设计者评为最容易使用的产品之一。在全球顶级的原始设备制造厂商(OEM)的无数嵌入式系统和用户最终产品中都可找到摩托罗拉的MCU,包括键盘、传呼机、电子游戏机、洗衣机、安全系统及汽车等。     

Measurement of the Seperation between Atoms beyond Diffraction Limit

We propose a scheme to obtain the distance of two identical atoms placed inside the standing wave field by monitoring the collective resonance fluorescence spectrum emitted by the two particles. We find three different parameter ranges, depending on the distance of the atoms as compared to the transition wavelength. For large interparticle distances, dipole-dipole coupling is negligible, and the main system evolution arises from the interaction with the standing wave field. In the small-distance limit, the dynamics is dominated by the dipole-dipole interaction. Finally, in the intermediate region, a rich interplay of the various couplings arises, which however is lifted for strong driving laser fields. The present measurement procedure allows us to distinguish the three cases. In each of the cases, we show how to determine the distance of the two particles and their respective positions relative to the nodes of the standing wave field with fractional-wavelength precision.     

ON THE UNIQUENESS OF THE WEAK SOLUTIONS OF A QUASILINEAR HYPERBOLIC SYSTEM WITH A SINGULAR SOURCE TERM

This paper is a continuation of the authors'previous paper[1].In this paper the authorsprove,assuming additional conditions on the initial data,some results about the existence anduniqueness of the entropy weak solutions of the Cauchy problem for the singular hyperbolicsystem a_t+(au)_x_2au/x=0,u_t+1/2(a~2+u~2)_x=0,x>0,t≥0.     

高衬底温度下溅射淀积二硅化钛膜

我们在室温和600℃下用复合的二硅化钛靶在〈111〉向的裸硅片上溅射淀积了二硅化铁膜。室温下淀积的二硅化钛膜需要在900℃下进行烧结,以使其电阻率降低。而600℃下淀积的二硅化钛膜已经反应充分形成颗粒较大的没有氧沾污的多晶状,而且该膜抗氧化。将该膜在900℃下进行进一步退火,发现其晶体结构、成分、电阻率即晶粒大小没有变化。     

混合Bitsadze-Lavrentév-Tricomi边值问题

It is well known that F. G. Tricomi (1923) is the originator of the theoryof boundary value problems for mixed type equations by establishing the Thicomi equation: y·u_xx+u_yy=0 which is hyperbolic for y < 0, elliptic for y=0. and parabolic for y= 0 and then applied it in the theory of transonic flows.Then A.V.Bitsadze together with M. A . Lavrent′ev (1950) established the Bitsadze Lavre nt′ev equation: sgn( y ) ·u_xx+u_yy=0 where sgn(y) = 1 for y > 0, = -1 for y<0, 0 for y=0 with the discontinuous coefficient sgn( y ) of u_xx, while in the case of Tricomi equation the corre sponding coefficient y is continuous. In this paper we establish the mixed Bitsadze Lavrent′ev Tricomi equation. Lu=K(y)·u_xx+sgn(x) ·u_yy+r(x,y)·u=f(x,y), where the coefficient K=K(y) of u_xx is increasing continuous and coefficient M=sgn(x) of u_yy discontinuous, r=r(x,y) is once continuously differentiable, f=f(x,y) continuous. Finally we prove the uniqueness of quasi regular solutions and observe that these new results can bbe applied in fluid dynamics.     

纪念声表面波器件的奠基人——英国物理学家瑞利发现瑞利波100周年声表面波器件的最新进展(二)

四、带通滤波器由本文第二部分可知,SAW带通滤波器设计的主要问题是推导合适的脉冲函数h(t),h(t)通过傅里叶变换与滤波器频率响应H(f)联系起来.通常,h(t)为无限值,所以必须对它截断,带通滤波器的实现.有限脉冲响应函数(其傅里叶变换给所需的“理想”频率响应以最佳近似值)的推导过程曾经是七十年代的主要研究课题.根据研究,几种非常有用的计算机辅助设计程序在目前已普遍采     

用于VLSI的注入氮化物特性

本文描述了在VLSI研制中通过氮注入形成氮化硅层。在形成各种氮化物层的过程中,注入分子氮能量范围为5到60keV,随后在1000℃的氮中退火。描述在炉中退火前后所形成的氮化物层特性,在不同的IR、SIMS和椭圆对称测量情况中找出局部氧化掩模的有效注入条件。相对于整个注入能量范围,注入氮的最初IR峰值为815cm~(-1)。对于退火后的高能量注入来说该位置会漂移到一个较高的波长数,低能量注入峰值接近于830cm~(-1),上述均与LPCVD为氧化物峰值相比而言。此研究结果认为,低能氧化物的化学成分几乎是可用定量计算的。退火过程中浓度分布向着表面漂移,并将增高峰值区氧的浓度。从氮化物分布剖面看最大值是在表面,而在<10keV时消失。在1000℃的蒸汽中生长5300(?)氧化层进行测试这些氮化物掩模特性。剂量为5×10~(16)N_2~+/cm~(-2)离子的氮化物在注入能量低于40keV会形成有效的氧化掩模。在此实验条件下,在10keV下所形成的氮化层可认为是一个有效的氧化掩模,足以适应选择性地腐蚀SiO_2,减小“鸟嘴”尺寸为常规LOCOS的四分之一。     

改进相干激光器阵列的热沉设计

一种有顶层(其横向尺寸与激光器阵列宽度相配)的热沉将明显改善激光器阵列的温度均匀性,便于器件锁相工作。