栅控二极管ESD工艺优化方法研究

为解决通过更改器件设计来提升电路抗静电放电（ESD）能力时成本高的问题,从栅控二极管的工艺出发,研究CAN总线电路抗ESD能力提升方法。通过TCAD仿真,评估了沟道掺杂对于栅控二极管抗ESD能力的影响,发现调整ESD离子注入工艺可以优化栅控二极管导通电阻,提高ESD保护窗口内的泄流能力,将电路抗ESD能力从2 000 V提高到3 000 V,为电路级芯片的失效问题提供了一种解决方案。     

Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation.Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorusdoped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.     

Meso-四(对羟基苯基)卟啉及其金属配合物的合成与表征

以丙酸为溶剂，用吡咯和对羟基苯甲醛直接合成了Meso-四（对羟基苯基）卟啉，探讨了溶剂丙酸和无水乙醇的用量对反应产率的影响；利用液相法合成了Mesc〉四（对羟基苯基）卟啉与Fe^3＋，Mn^2＋，Co^2＋，Ni^2＋，Cu^2＋和Zn^2＋ 6种金属离子形成的配合物，探讨了Meso-（对羟基苯基）卟啉与金属盐用量的比例对产率的影响；利用UV-Vis和MS对合成的物质进行表征．     

便携式气相色谱-质谱联用仪现场测定畜禽粪便堆肥中挥发性有机物

采用便携式气相色谱-质谱联用仪进行了畜禽粪便堆肥排放气体中挥发性有机物质的现场分析.结果表明,在堆肥排放气体中可检测到含硫物质、脂肪烃、芳香烃及含氯有机物共20种物质.在已定量的8种物质中,CS2浓度最高,达到204 mg/m3;CS2和二甲二硫超过《恶臭污染物排放标准》(GB1455-93)的限值;SO2和苯超过《室内空气质量标准》(GB/T 18883-2002)的限值.本方法避免了常规检测中易出现的组分分解等问题,SO2测定值较常规方法提高59.3％.本方法操作方便,结果准确,适于对挥发性有机化合物的在线监测.     

Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping(below 30 K) and nearest-neighbor hopping(above 30 K).The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source–drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.     

DAM中波发射机中驱动电源调整器日常维护与故障处理

文章对AM103S5—2型10kW DAM中波发射机的驱动电源调整器的原理进行了介绍,同时,对发射机所出现的驱动电源调整器故障的原因进行了分析,并提出了加强日常维护的措施。     

Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K.     

气相色谱法测定植株体内硝基苯

建立了气相色谱法测定植株样品体内硝基苯含量的方法。以苯-丙酮(50∶50,V/V)混合物作提取剂,高速匀浆后超声提取,硅镁型吸附剂净化,采用DB-1701石英毛细管色谱柱分离,GC-μECD检测。结果表明,3个水平添加时的回收率(n=5)分别为96.0%~107.0%、89.5%~99.5%和85.6%~97.8%;相对标准偏差均小于5%;方法检出限0.005μg/g;标准曲线相关系数r=0.9991。该方法可用于植株样品中硝基苯测定。     

Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate

High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate. Hexagonal InAs nanowires are uniformly grown between face-to-face (111) vertical sidewalls of neighboring Si fingers by metal-organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers, namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10⁵ are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.     

全耗尽绝缘层上硅技术及生态环境简介

随着半导体技术节点微缩到3 nm及以下,晶体管的尺寸难以进一步缩小,导致了成本优势的减小。功能性和功耗成为物联网、可穿戴设备、汽车电子等应用的主要关注点,为满足这些需求,全耗尽绝缘层上硅（Fully Depleted Silicon on Insulator, FDSOI）技术被进一步研发和产品化。对FDSOI技术的特点和生态环境进行了总结。FDSOI利用体偏置平衡功耗与性能,采用应力优化提高迁移率,通过减薄硅膜厚度抑制短沟道效应并减小寄生电容,因此被应用到低功耗处理器、低噪声放大器、嵌入式存储器等低功耗产品。FDSOI具有巨大的市场潜力,将成为半导体技术一个重要的发展方向。