Metal-to-metal antifuse with low programming voltage and low on-state resistance

This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al-HfO₂-Al antifuse. The programming voltage of the antifuse with 120 Å HfO₂ is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 Å HfO₂ while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.     

时间分辨荧光免疫分析的双向螯合剂-BCPDA的合成与表征(Ⅱ)

本文是在三步法合成用于时间分辨激光荧光免疫分析的4，7-二（氯磺酰基苯基）-1，10-菲罗啉-2，9-二羧酸（BCPDA）基础上，为提高产物纯度，探讨五步合成方法。本法经氯化、酯化、制备二钠盐、还在二羧酸、磺化，获得了目标产物--BCPDA。研究了中间产物重结晶条件和结构参数。并将五步合成目标产物与三步合成的目标产物的结果通过熔点、红外光谱、核磁共振氢谱、元素分析及其某些物理、化学性质进行了报道。与国外文献结果具有较好的一致性，正在进行的标记分析实验证实了BCPDA的双重功能。