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提出了一种具有部分超结(super junction, SJ)结构的新型SiC肖特基二极管,命名为SiC Semi-SJ-SBD结构,通过将常规SBD耐压区分为常规耐压区和超结耐压区来减小导通电阻,改善正向特性.利用二维器件模拟软件MEDICI仿真分析,研究了不同超结深度和厚度时击穿电压(VB)和比导通电阻(Ron-sp),与常规结构的SBD比较得出,半超结结构可以明显改善SiC肖特基二极管特性,并得到优化的设计方案,选择超结宽度2<
关键词:
SiC肖特基二极管
super junction
导通电阻
击穿电压 相似文献
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A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression.Characteristics of the device have been investigated based on physical models for material properties and improved trap models.By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate (BG-FP) structure,it is shown that the proposed structure improves device properties in comprehensive aspects. A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance(Cgd) under a large drain voltage.A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less Cgd than a conventional FP.For microwave applications,4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel.For high power applications,the proposed structure is able to endure higher operating voltage as well.The maximum saturation current density of 460 mA/mm is yielded.Also,the gate-lag ratio under a drain voltage of 20 V is close to 90%.In addition,5%and 17.8%improvements in fT and fmax are obtained compared with a BG-FP MESFET in AC simulation,respectively.Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design. 相似文献
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基于器件物理分析方法,结合高场迁移率、肖特基栅势垒降低、势垒隧穿等物理模型, 分析了改进型异质栅结构对深亚微米栅长碳化硅肖特基栅场效应晶体管沟道电势、 夹断电压以及栅下电场分布的影响.通过与传统栅结构器件特性的对比表明, 异质栅结构在碳化硅肖特基栅场效应晶体管的沟道电势中引入了多阶梯分布,加强了近源端电场; 另一方面,相比于双栅器件,改进型异质栅器件沟道最大电势的位置远离源端, 因此载流子在沟道中加速更快,在一定程度上屏蔽了漏压引起的电势变化,更好抑制了短沟道效应. 此外,研究了不同结构参数的异质栅对短沟道器件特性的影响,获得了优化的设计方案, 减小了器件的亚阈值倾斜因子.为发挥碳化硅器件在大功率应用中的优势,设计了非对称异质栅结构, 改善了栅电极边缘的电场分布,提高了小栅长器件的耐压. 相似文献
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外延生长6H-SiC/Si薄膜的微结构研究 总被引:1,自引:0,他引:1
采用 Si H4 -C3H8-H2 气体反应体系 ,通过 APCVD工艺在 Si(1 0 0 )衬底上进行 Si C薄膜生长时 ,严格控制缓冲层生长的工艺条件 ,即 1 3 0 0°C碳化温度较高的 C3H8饱和浓度 ,可以获得结晶质量良好的 6H-Si C单晶外延层。利用 SEM、X射线衍射能谱 (XRD)及光致发光谱 (PL)分析了薄膜微结构并讨论了其微观机制 相似文献
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