Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.     

可用于弱光探测器的量子线研究进展

以量子线作为导电沟道的场效应弱光探测器可在低工作电压下达到很高灵敏度.文章主要对可用于此种弱光探测器的V型和脊形量子线的生长机理和制备方法进行综述,给出了量子线的PL测试结果.采用MBE外延生长法在V型槽图形衬底上生长了OaAs/AlGaAs量子线FET外延结构,扫描电子显微镜下初步判定在V型槽底部形成了截面近三角形的量子线结构.     

Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy

Molecular beam epitaxy growth of an In_xGa_1-xAs/GaAs quantum well（QW） structure（x equals to 0.17 or 0.3） on offcut（100） Ge substrate has been investigated.The samples were characterized by atomic force microscopy,photoluminescence（PL）,and high resolution transmission electron microscopy.High temperature annealing of the Ge substrate is necessary to grow GaAs buffer layer without anti-phase domains.During the subsequent growth of the GaAs buffer layer and an In_xGa_1-xAs/GaAs QW structure,temperature plays a key role. The mechanism by which temperature influences the material quality is discussed.High quality In_xGa_1-x As/GaAs QW structure samples on Ge substrate with high PL intensity,narrow PL linewidth and flat surface morphology have been achieved by optimizing growth temperatures.Our results show promising device applications forⅢ-Ⅴcompound semiconductor materials grown on Ge substrates.     

高稳定线性调谐GaAs基波长可调谐共振腔增强型探测器

研制了一种GaAs基波长可调谐共振腔增强型探测器. 采用分子束外延设备生长In_0.25Ga_0.75As/GaAs量子阱作为器件的有源区, 无偏压时器件的响应峰波长在1071 nm,器件在21 V的直流调谐电压下,实现了波长大于23 nm的调谐. 统计结果表明,当调谐电压大于5 V时,调谐电压与响应波长之间具有稳定、精确的对应关系, 且近似线性调谐,同时对器件响应峰的特性进行了理论分析. 关键词： GaAs 共振腔增强型探测器 高稳定 线性调谐     

图形衬底量子线生长制备与荧光特性研究

报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的. 关键词： V型槽图形衬底 量子线 GaAs     

An effective reflectance method for designing broadband antireflection films coupled with solar cells

The solar spectrum covers a broad wavelength range, which requires that antireflection coating (ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell. In this paper, we present two methods to measure the composite reflection of SiO₂/ZnS double-layer ARC in the wavelength ranges of 300-870 nm (dual-junction) and 300-1850 nm (triple-junction), under the solar spectrum AM0. In order to give sufficient consideration to the ARC coupled with the window layer and the dispersion effect of the refractive index of each layer, we use multi-dimensional matrix data for reliable simulation. A comparison between the results obtained from the weighted-average reflectance (WAR) method commonly used and that from the effective-average reflectance (EAR) method introduced here shows that the optimized ARC through minimizing the effective-average reflectance is convenient and available.     

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

Molecular beam epitaxy growth of a bilayer stacked InAs/GaAs quantum dot structure on a pure GaAs matrix has been systemically investigated.The influence of growth temperature and the InAs deposition of both layers on the optical properties and morphologies of the bilayer quantum dot（BQD） structures is discussed.By optimizing the growth parameters,InAs BQD emission at 1.436μm at room temperature with a narrower FWHM of 27 meV was demonstrated.The density of QDs in the second layer is around 9×10⁹ to 1.4×10¹⁰ cm^-2. The BQD structure provides a useful way to extend the emission wavelength of GaAs-based material for quantum functional devices.     

An effective reflectance method for designing broadband antireflection films coupled with solar cells

The solar spectrum covers a broad wavelength range,which requires that antireflection coating(ARC) is effective over a relatively wide wavelength range for more incident light coming into the cell.In this paper,we present two methods to measure the composite reflection of SiO2/ZnS double-layer ARC in the wavelength ranges of 300-870 nm(dualjunction) and 300-1850 nm(triple-junction),under the solar spectrum AM0.In order to give sufficient consideration to the ARC coupled with the window layer and the dispersion effect of the refractive index of each layer,we use multidimensional matrix data for reliable simulation.A comparison between the results obtained from the weighted-average reflectance(WAR) method commonly used and that from the effective-average reflectance(EAR) method introduced here shows that the optimized ARC through minimizing the effective-average reflectance is convenient and available.     

Molecular beam epitaxy growth of GaAs on an offcut Ge substrate

Molecular beam epitaxy growth of GaAs on an offcut Ge (100) substrate has been systemically investigated. A high quality GaAs/Ge interface and GaAs film on Ge have been achieved. High temperature annealing before GaAs deposition is found to be indispensable to avoid anti-phase domains. The quality of the GaAs film is found to strongly depend on the GaAs/Ge interface and the beginning of GaAs deposition. The reason why both high temperature annealing and GaAs growth temperature can affect epitaxial GaAs film quality is discussed. High quality In_0.17Ga_0.83As/GaAs strained quantum wells have also been achieved on a Ge substrate. Samples show flat surface morphology and narrow photoluminescence line width compared with the same structure sample grown on a GaAs substrate. These results indicate a large application potential for III--V compound semiconductor optoelectronic devices on Ge substrates.     

生长温度对于Ge衬底上分子束外延生长的InGaAs/GaAs量子阱结构质量的影响

本文研究了斜切割（100）Ge衬底上InxGa1-xAs/GaAs量子阱结构的分子束外延生长（In组分为0.17或者0.3）。所生长的样品用原子力显微镜、光致发光光谱和高分辨率透射电子显微镜进行了测量和表征。结果发现,为了生长没有反相畴的GaAs缓冲层,必须对Ge衬底进行高温退火。在GaAs外延层和InxGa1-xAs/GaAs量子阱结构的生长过程中,生长温度是一个至关重要的参数。文中讨论了温度对于外延材料质量的影响机理。通过优化生长温度,Ge衬底上的InxGa1-xAs/GaAs量子阱结构的光致发光谱具有很高的强度、很窄的线宽,样品的表面光滑平整。这些研究表面Ge 衬底上的III-V族化合物半导体材料有很大的器件应用前景。