排序方式: 共有17条查询结果,搜索用时 0 毫秒
1.
通过适当的工艺措施,采用Bridgman法生长了直径为30mm的X射线及γ射线探测器级的Cd.9Zn0.1Te晶锭.测试结果表明:该晶锭结晶质量良好,位错密度低,成分均匀,杂质含量低,红外透过率和电阻率都十分接近本征Cd.9Zn0.1Te的值.并从晶体的生长特性、缺陷和杂质的角度,分析了生长高性能晶体的条件,研究了生长Cdl-xZnxTe晶体的x值与缺陷和杂质浓度之间的关系. 相似文献
2.
3.
4.
Tens of Cd0.9Zn0.1Te wafers from three ingots grown by the vertical Bridgman method (VBM) are characterized by infrared (IR) transmission. Four types of distinct IR transmission spectra are found for these wafers. Each of them corresponds to one kind of wafers with specified quaJities. At the same time, approximate mathematical relations exist between the wafer dislocation density and their IR transmissions at the wavenumber 4000cm^-1, as well as between the resistivity and the IR transmissions at the wavenumber 500cm^-1. The reasons of the above results are attempted to be given. 相似文献
5.
Photoluminescence (PL) and infrared transmission spectra are used to characterize In-doped Gd0.9Zn0.1 Te (GdZnTe:In).The PL spectrum reveals that there are two other strong emissions situated at 1.54 eV and 1.62 eV as well as the near band edge emission.This indicates that the doped In can lead to two donor levels of 0.12eV and 0.04eV in the CdZnTe band construction,respectively.The IR transmission spectra show that when the wavenumber is larger than 1000cm^-1,the CdZnTe:In was almost opaque to the IR emission.Then its IR transmission rapidly increases to 52% when the wavenumber is decreased to 350cm^-1 and then holds constant.This confirms the existence of the donor level of 0.12 eV. 相似文献
6.
以配比为 150mL饱和重铬酸钾水溶液比20mL HCl的腐蚀剂,对Hg0.89Mn0.11Te晶片以30s为单位,连续腐蚀了5次,对每次腐蚀后的表面形貌在光学显微镜和扫描电镜下分别进行了观察.所用晶片是采用垂直布里奇曼法生长而成,垂直晶锭轴向切割下的圆形晶片.结果表明:腐蚀30s后,可观察到清晰的晶界及Te夹杂.而位错蚀坑密度随着腐蚀时间增长,先是增大,后又开始逐步减少,在60s时达到一个峰值,120s后又处于稳定.位错蚀坑尺寸随着腐蚀时间增长一直是逐步增大的.说明晶片实际的位错蚀坑需要腐蚀120s后才可以观察到.通过化学腐蚀机理分析,对实验结果进行了解释. 相似文献
7.
8.
9.
10.