A novel terahertz device with multi-function of polarization and switch based on phase transition of VO2

A terahertz (THz) polarizer and switch structure is proposed based on the phase transition of vanadium dioxide (VO2). When VO2 is in the insulation phase, the resonance frequencies of the proposed structure are 1.49 THz and 1.22 THz for the x- and y-polarization, respectively. It can perform as a THz polarizer with extinction ratios of 52.5 dB and 17 dB for the y- and x-polarization, respectively; When VO2 transforms into metallic phase, the resonance frequency for x-polarization wave shifts from 1.49 THz to 1.22 THz, while that remains still for the y-polarization component. It means that the structure can work as a polarization-dependent THz switch with a high extinction ratio of 32 dB.     

基于锑化铟亚波长阵列结构的太赫兹聚焦器件

基于锑化铟材料在太赫兹波段的横向磁光效应,提出了一种金属-空气-锑化铟-金属非对称周期性亚波长线栅阵列结构的表面等离子体器件,研究了外加磁场和温度对不同频率透射波聚焦特性的影响.结果表明,在外加磁场强度B=0.6 T、温度T=172 K时,可实现0.8 THz透射光束的聚焦,焦点处能流密度透过率比没有外加磁场时增强28倍.对于不同频率入射波,通过主动调节磁场强度和温度,能实现从0.4—0.8 THz宽频带的聚焦,而且焦点处的透过率相比于无外加磁场时的普通狭缝聚焦透过率增强20倍以上,该器件是太赫兹波段理想的可调谐、宽频段、高透过率的聚焦器件.     

基于VO2相变的光控太赫兹调制器

基于VO2薄膜相变特性,通过在石英基底上制备VO2薄膜和亚波长金孔阵列,并在理论和实验上研究了金属孔阵列与VO2薄膜置于基底同侧和异侧的两种太赫兹(THz)调制器。系统研究了在光泵浦条件下两种样品的THz波的传输特性。结果表明,随着泵浦光功率的改变,两种结构的器件均可以实现对THz波强度的调制。对比分析两种结构器件的THz透射谱发现,紧邻金属孔阵列的金属相VO2能够有效地抑制THz表面等离子体的局域透射增强效应,使调制器的调制深度得到显著增强,这对基于相变材料调制器的设计具有重要意义。