TFO与TrFO编解码协商技术及其在3G中的应用

随着3G从实验室到大规模商用试验网的建立,TFO(tandem free operation,无二次编解码操作)和TrFO(transcoder free operation,无编解码器操作)两种编解码协商技术得到了越来越多的关注。由于这两种技术避免了早期移动网络中存在的语音信号必须进行两次编、解码转换的问题,有效提高了语音的QoS。     

Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05))O_3 thin membranes

Free-standing antiferroelectric Pb(Zr_(0.95)Ti_(0.05)O_3(PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition.X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an α-axis preferred orientation.The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm,but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film.The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm~3 and 54.5%,respectively.In contrast,after removing the substrate,the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm~3 and 67.9%,respectively.     

具有不同交换偏置方向的外延FeGa/IrMn双层膜的磁各向异性与磁化翻转

采用磁控溅射方法在MgO(001)单晶衬底上制备了交换偏置分别沿着FeGa [100]和[110]方向的FeGa/IrMn外延交换偏置双层膜,研究了交换偏置取向对磁化翻转过程与磁化翻转场的影响.铁磁共振场的角度依赖关系的测量与拟合,表明样品存在不同取向的四重对称磁晶各向异性、单向交换磁各向异性和单轴磁各向异性的叠加.矢量磁光克尔效应测量表明交换偏置沿着[100]方向的样品在不同磁场方向下表现矩形、非对称和单边两步磁滞回线;交换偏置沿着[110]方向的样品在不同磁场方向下表现单边两步和双边两步磁滞回线.考虑不同交换偏置方向的畴壁形核和位移模型,能够很好地解释磁化翻转路径随磁场方向的变化规律和拟合磁化翻转场的角度依赖关系,表明交换偏置方向的改变使得畴壁形核能发生显著变化.     

柔性磁性薄膜材料与器件研究进展

近年来,随着物联网、仿生机器人、移动式医疗健康等领域的兴起,柔性电子材料和器件受到广泛关注.基于磁性材料构建的传感器和存储器是电子器件的重要组成部分.随着柔性薄膜材料制备技术的发展,人们已经制备出高质量的柔性乃至可拉伸的磁性金属和氧化物薄膜,它们展现的不仅是更强的变形能力,还有新的物理效应与响应规律.研究结果表明,柔性磁电子器件在非接触传感、高灵敏应变探测、超分辨触觉感知等方面展现出独特的优势,具有广阔的应用前景.本文主要从柔性磁性材料的制备、物性调控规律和器件应用方面综述这一新兴领域的发展动态,并对其未来的发展趋势进行展望.     

Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO3(001)

Exchange coupling across the interface between a ferromagnetic (FM) layer and an antiferromagnetic (AFM) or another FM layer may induce a unidirectional magnetic anisotropy and/or a uniaxial magnetic anisotropy, which has been extensively studied due to the important application in magnetic materials and devices. In this work, we observed a fourfold magnetic anisotropy in amorphous CoFeB layer when exchange coupling to an adjacent FeRh layer which is epitaxially grown on an SrTiO₃(001) substrate. As the temperature rises from 300 K to 400 K, FeRh film undergoes a phase transition from AFM to FM phase, the induced fourfold magnetic anisotropy in the CoFeB layer switches the orientation from the FeRh$\langle 110\rangle $ to FeRh$\langle 100\rangle $ directions and the strength is obviously reduced. In addition, the effective magnetic damping as well as the two-magnon scattering of the CoFeB/FeRh bilayer also remarkably increase with the occurrence of magnetic phase transition of FeRh. No exchange bias is observed in the bilayer even when FeRh is in the nominal AFM state, which is probably because the residual FM FeRh moments located at the interface can well separate the exchange coupling between the below pinned FeRh moments and the CoFeB moments.     

宽带城域网技术探讨

阐述了宽带城域网的3个网络层次及其对应功能，并对各层采用的有关技术作了介绍和比较，通过比较可以在城域网建设时对技术选择提供参考。     

Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

We fabricated flexible spin valves on polyvinylidene fluoride(PVDF) membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance(GMR) behaviors. The large magnetostrictive Fe_(81)Ga_(19)(Fe Ga) alloy and the low magnetostrictive Fe_(19)Ni_(81)(Fe Ni) alloy were selected as the free and pinned ferromagnetic layers.In addition, the exchange bias(EB) of the pinned layer was set along the different thermal deformation axes α_(31) or α_(32) of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α_(32) direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB α_(32)becomes close to that on Si, but for spin valves with EB α_(31)is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive Fe Ga as the free layer.     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.     

固载双功能酸性离子液体催化剂[PSMIM]HSO4/SiO2的制备及其催化制备生物柴油

该大学生创新研究项目以清洁能源为切入点,借助绿色催化剂离子液体催化制备生物柴油。在制备双功能Brönsted酸性离子液体[PSMIM]HSO4的基础上,以多孔氧化硅为载体,采用物理负载法制备固载型催化剂[PSMIM]HSO4/SiO2。并以此为催化剂催化葵花油制备生物柴油,探讨催化剂用量、反应时间、醇油比和反应温度对生物柴油产率的影响。结果表明：醇油比为25：1、催化剂用量为8%、反应温度为160℃、时间为10 h的条件下,生物柴油的转化率达到92.5%。采用FTIR、13C NMR、XRD对催化剂结构进行表征;采用GC-2010气相色谱对生物柴油进行组分分析;并对其密度、运动黏度、凝点等理化性能进行了测定。结果表明所制得的生物柴油基本符合我国生物柴油的标准。本项目的开展不仅在研究成果方面取得了一定的成绩,同时也使学生的创新意识和团队意识,以及教师的教学能力得到提升。     

S12 EC74交换机TUP改为ISUP的流程及命令

目前，我国绝大部分地区的电话网使用No.7信令传输方式，但信令点的用户部分大多为TUP（电话用户部分），TUP主要是针对语音电话业务度身定做的，相对于非话音业务和补充业务有很大的局限性。本文阐述了S12 EC74交换机TUP改为ISUP的必要性及流程，并列举了ISUP改造中的注意事项和一些问题的解决方法。