A fast SOI-based variable optical attenuator with a p-i-n structure with low polarization dependent loss

According to the plasma dispersion effect of silicon (Si), a silicon-on-insulator (SOI) based variable optical attenuator (VOA) with p-i-n lateral diode structure is demonstrated in this paper. A wire rib waveguide with sub-micrometer cross section is adopted. The device is only about 2 mm long. The power consumption of the VOA is 76.3 mW (0.67 V, 113.9 mA), and due to the carrier absorption, the polarization dependent loss (PDL) is 0.1 dB at 20 dB attenuation. The raise time of the VOA is 34.5 ns, the fall time is 37 ns, and the response time is 71.5 ns.     

用于FBG解调的AWG芯片的设计、仿真与制备

设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。     

基于阵列波导光栅的光纤布拉格光栅解调技术综述

基于阵列波导光栅的光子集成解调技术是硅光领域的研究热点和难点.相比传统解调方法,基于阵列波导光栅的光子集成解调技术因其解调精度高、解调速度快、封装体积小等优势,在光纤布拉格光栅的高速、高精度解调上具有明显优势.近年来,随着光子集成技术的发展,各科研院所和相关机构对阵列波导光栅的光子集成解调法进行了广泛深入的研究与优化.本文通过介绍阵列波导光栅工作原理及基于阵列波导光栅的光纤布拉格光栅波长解调原理,结合基于阵列波导光栅的光纤布拉格光栅解调仪在材料体系和系统性能两个方面的重要进展,归纳了基于阵列波导光栅的解调仪的典型应用场景,从新材料、系统集成和规模化三方面对光纤布拉格光栅解调系统的未来发展提出针对性建议,为基于阵列波导光栅的光子集成解调技术的研究发展提供参考.     

Improved Performance of a Wavelength-Tunable Arrayed Waveguide Grating in Silicon on Insulator

The improved performance of a wavelength-tunable arrayed waveguide grating (AWG) is demonstrated, including the crosstalk, insertion loss and the wavelength tuning efficiency. A reduced impact of the fabrication process on the AWG is achieved by the design of bi-level tapers. The wavelength tuning of the AWG is achieved according to the thermo-optic effect of silicon, and uniform heating of the silicon waveguide layer is achieved by optimizing the heater design. The fabricated AWG shows a minimum crosstalk of 16 dB, a maximum insertion loss of 3.91 dB and a wavelength tuning efficiency of 8.92 nm/W, exhibiting a ～8 dB improvement of crosstalk, ～2.1 dB improvement of insertion loss and ～5 nm/W improvement of wavelength tuning efficiency, compared to our previous reported results.     

基于SOI的低功耗低偏振相关损耗的可调光衰减器

基于硅的等离子体色散效应,构建了大尺寸SOI基光波导电光可调光衰减器(VOA)仿真模型,系统模拟分析了结构参数对VOA衰减及偏振相关特性的影响,优化设计出了低功耗、低偏振相关损耗的VOA器件,仿真结果表明,该VOA在20 dB衰减下的功耗仅为24 mW,偏振相关损耗为0.41 dB.     

基于SOI的16通道VMUX器件单片集成

本文制作了基于绝缘体上硅(SOI)材料的16通道的光功率可调波分复用器(VMUX),并且采用了脊形波导结构。该器件是由信道间隔100GHz的阵列波导光栅(AWG)及电光型可调光衰减器(VOA)组成,该VOA采用了侧向p-i-n二极管结构。该VMUX器件的插入损耗为9.1dB,串扰为10dB。VOA在衰减量为20dB时的注入电流为60.74mA。器件的整体尺寸为2.9×1mm2。该VMUX器件具备优异的16通道波分复用及光功率均衡的性能。     

基于3 μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成

波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200 GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7 dB,串扰小于-22 dB。电吸收型VOA在20 dB的衰减量下的功耗为572 mW （106 mA,5.4 V）。此外,该器件可以实现光功率的快速衰减,在0~5 V的外加方波电压下,VOA上升及下降时间分别为50.5 ns和48 ns。     

Design and fabrication of wavelength tunable AWGs based on the thermo-optic effect

In this Letter, a 16 channel 200 GHz wavelength tunable arrayed waveguide grating(AWG) is designed and fabricated based on the silicon on insulator platform. Considering that the performance of the AWG, such as central wavelength and crosstalk, is sensitive to the dimension variation of waveguides, the error analysis of the AWG with width fluctuations is worked out using the transfer function method. A heater is designed to realize the wavelength tunability of the AWG based on the thermo-optic effect of silicon. The measured results show that the insertion loss of the AWG is about 6 d B, and the crosstalk is 7.5 d B. The wavelength tunability of 1.1 nm is achieved at 276 m W power consumption, and more wavelength shifts will gain at larger power consumption.     

基于光子晶体反射镜的刻蚀衍射光栅设计与制备

刻蚀衍射光栅作为波分复用/解复用器件,有望在光通信系统中得到广泛应用。在基于顶层硅厚度为220 nm的绝缘体上硅材料上设计并制作了一种新型刻蚀衍射光栅,该刻蚀衍射光栅引入六角晶格空气孔型光子晶体作为其反射镜。模拟结果显示,相较于传统的阶梯光栅反射镜的刻蚀衍射光栅,光子晶体反射镜的刻蚀衍射光栅在理论上可有效降低器件的制作工艺难度以及插入损耗,同时可以实现器件偏振的保持。随后仅利用一步电子束光刻工艺及一步电感耦合等离子体刻蚀工艺制作了该光子晶体反射镜的刻蚀衍射光栅。测试结果表明:该光子晶体反射镜的刻蚀衍射光栅片上损耗为9.51~11.86 dB,串扰为5.87~8.72 dB,后续可通过优化工艺条件和优化输出波导布局,进一步提高器件的性能。     

基于绝缘体上硅材料的25通道200 GHz的阵列波导光栅

报道了基于绝缘体上硅材料的25通道、信道间隔200 GHz的阵列波导光栅, 分别优化了输入波导/输出波导/阵列波导间的最小间距 (Δxi/Δxo/d) , 及其自由传播区和阵列波导之间边界结构 (W2/L2/L3) .实验结果表明, 该阵列波导光栅的插入损耗为5～7 dB, 串扰为13～15 dB, 该阵列波导光栅的性能得到有效提升.同时也提出了减小插损与串扰的进一步优化方案.