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The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper. Wafer lifetimes are measured by a μ-PCD method, and well designed NPT-IGBTs with a final wafer thickness of 500 μm are fabricated. The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered. This indicates that anode injection efficiency reduction must be considered in the breakdown model. Furthermore, the parameters related to anode injection efficiency reduction are estimated according to the experimental data. 相似文献
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A linearly graded-doping junction termination extension(LG-JTE) for 3.3-kV-class insulated gate bipolar transistors(IGBTs) was proposed and experimentally investigated.Unlike conventional multi-implantation utilizing more than one photolithography step,a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure.Based on the simulation results,IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform.The fabricated devices exhibited a 3.7 kV forward-blocking voltage,which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3-kV-class IGBT in a domestic application. 相似文献
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