Controlled growth and field emission of vertically aligned AlN nanostructures with different morphologies

The controllable growth of three different morphologies of AlN nanostructures (nanorod, nanotip and nanocrater) arrays are successfully realized by using chemical vapour deposition (CVD) technology. All three nanostructures are of single crystal h-AlN with a growth orientation of [001]. Their growth is attributed to the vapour-liquid-solid (VLS) mechanism. To investigate the factors affecting field emission (FE) properties of AlN nanostructures, we compare their FE behaviours in several aspects. Experimental results show that AlN nanocrater arrays possess the best FE properties, such as a threshold field of 7.2~V/μm and an emission current fluctuation lower than 4%. Moreover, the three AlN nanostructures all have good field emission properties compared with a number of other excellent cathode nanomaterials, which suggests that they are future promising FE nanomaterials.     

No-catalyst growth of vertically-aligned AlN nanocone field electron emitter arrays with high emission performance at low temperature

The AlN nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating AlN nanostructures, but high growth temperature over 800°C and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned AlN nanocone arrays at 550°C on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.     

大面积超长氮化铝纳米线的制备及场发射特性研究

报道了一种通过直接氮化Al粉合成氮化铝(AlN)纳米线的方法。该方法无需任何催化剂,并且可以获得大面积的单一形貌的AlN纳米线。所制备的AlN纳米线的平均长度超过20μm,直径为30～125nm,是沿着[001]方向生长的单晶六方纤锌矿结构。场发射特性测试结果表明,AlN超长纳米线的开启电场为6.3V/μm,阈值电场为12.2V/μm,最大电流密度达1440μA/cm2。这暗示着AlN超长纳米线是一种很有潜力的冷阴极纳米材料。     

片式多层陶瓷电容器的击穿特性研究

对引起片式多层陶瓷电容器（MLCC）击穿失效的主要因素进行了研究。根据MLCC的实际结构特点和材料特性建立模型,利用有限元模拟方法分析了典型缺陷对MLCC样品内部电场强度分布的影响,进一步地总结、分析了MLCC样品的击穿特性,具有一定的参考价值。     

一种基于质量规格书的物料管控方法

首先,对传统的物料管控方法进行了总结和分析;然后,提出一种基于质量规格书的物料管控方法;最后,给出了该方法中质量规格书的具体内容.该方法既保障了元器件的固有可靠性,又可以免去使用单位的来料检测实验,是一种简便、 有效的物料管控方法.     

贴片式电子元件典型的失效模式及机理分析

针对贴片式电阻器和贴片式陶瓷电容器中银电极典型的腐蚀漏电失效模式,选取两个案例进行分析。通过采用X-ray、金相切片和SEM&EDS等分析手段,阐述了这类贴片式电子元件的失效机理,剖析了元件出现硫化腐蚀、电化学迁移失效与银电极制作工艺及电极浆料的关系,并提出了有效控制此类失效的措施与对策。