ZnO-CuO掺杂对Mn-Co-O系NTC热敏电阻微观结构与电性能的影响

以Mn3O4和Co3O4为原料,ZnO和CuO为掺杂剂,采用固相反应法制备了Mn2.3Co3.7-x-yZnxCuyO4(x=0,0.03和0.06:y=0,0.05,0.08,0.10和0.20)单层片式NTC热敏电阻材料.研究了该材料的微观结构和电性能.结果表明:通过掺杂ZnO和CuO,可以制备低阻高B型Mn-Co...     

双杂质一维原子链中的晶格振动

对于含有两个杂质的一维单原子链的振动方程求解,得到晶格振动频率的解.分析了振动频率和杂质质量以及两杂质间距离的关系.     

A study on the real-time radiation dosimetry measurement system based on optically stimulated luminescence

The optically stimulated luminescent (OSL) radiation dosimeter technically surveys a wide dynamic measurement range and a high sensitivity. Optical fiber dosimeters provide capability for remote monitoring of the radiation in the locations which are difficult-to-access and hazardous. In addition, optical fiber dosimeters are immune to electrical and radio-frequency interference. In this paper, a novel remote optical fiber radiation dosimeter is described. The optical fiber dosimeter takes advantage of the charge trapping materials CaS:Ce, Sm that exhibit OSL. The measuring range of the dosimeter is from 0.1 to 100 Gy.     

荧光材料SrS:Eu,Sm在辐射剂量测量中的应用

采用碳还原法合成了SrS：Eu,Sm,并对光激励发光材料SrS：Eu,Sm的辐射剂量特性进行了研究。将SrS：Eu,Sm材料做成PMMA剂量片在^60Coγ源下接受辐照,然后用自己搭建的在线实时测试系统对剂量片发出的荧光信号进行测量。主要探讨了光激励发光材料SrS：Eu,Sm在辐射剂量测量中的应用。     

镍、金掺杂n型硅材料的NTC和电学特性

Silicon materials compensated by deep level impurities such as nickel and gold have negative temperature coefficient （NTC） characteristics. In this work, n-type silicon wafers are smeared by nickel chloride ethanol solution and gold chloric acid ethanol solution, and subsequently put in the opening environment to heat. The electrical resistance and B-value of the thermistors made by this silicon material are measured and analyzed. When the silicon surface concentration of gold atoms is 2 × 10-6 mol/cm2, the uniformity of the single-crystal silicon material is optimal. When the diffusion temperature is between 900 and 1000 ℃, a material with high B-value and low electrical resistivity is obtained. The B-T and R-T change laws calculated by the theory of semiconductor deep level energy are basically consistent with the experimental results.     

The study on optically stimulated luminescence dosimeter based on the SrS：Eu,Sm and CaS：Eu,Sm

With the increasing use of nuclear energy, there is a need for a wider range of efficient dosimeters for radiation detection and assessment. There has been a tremendous growth in the development of radiation detectors and devices in the past few decades. In recent years, the development of new materials for radiation dosimetry has progressed significantly. Alkaline earth sulfides （AES） have been known for a long time as excellent and versatile phosphor materials. In the present investigation, a number of phosphor samples such as mono-, binary and ternary sulfides of alkaline earths （II^a-VI^b） have been prepared and their TL properties have been studied with respect to exposure （x-ray） response and fading. In this paper, some results on SrS：Eu, Sm and CaS：Eu, Sm phosphors are presented. A type of novel OSL dosimeter is described. The dosimeter takes advantage of the characteristics of charge trapping materials SrS：Eu, Sm and CaS：Eu, Sm that exhibit optically stimulated luminescence （OSL）. The measuring range of the dosimeter is from 0.01 to 1000 Gy. The OSL dosimeters provide capability for remote monitoring radiation locations which are difficult to access and hazardous. This equipment is relatively simple, small in size and has low power consumption. The device is suitable for space radiation dose exploration. In addition, it also can be used in IC and other radiation occasions and has good prospects.     

碱土金属硫化物光激励材料在辐射剂量测量中的应用

采用碳还原法合成了掺杂两种稀土金属离子的碱土金属硫化物光激励发光材料,并对光激励发光材料的辐射剂量特性进行了研究。将材料做成PMMA剂量片在60Coγ源下接受辐照,然后用自己搭建的在线实时测试系统对剂量片发出的荧光信号进行测量。实验发现碱土金属硫化物光激励发光材料在0.01～1 000 Gy内,有很好的辐射剂量响应范围(5个剂量级),荧光信号峰值强度与辐照剂量线性关系良好,说明碱土金属硫化物光激励发光材料在辐射剂量测量中有着很好的应用前景。文章主要探讨了碱土金属硫化物光激励发光材料在辐射剂量测量中的应用。     

铁掺杂对不同导电类型硅材料电阻率的影响

采用电阻率为4.8.cm的p型硅片和10.cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料。在室温避光条件下,测量样品电阻率ρ,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响。结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74×10–5mol/cm2时,在1 200℃下扩散1 h后,材料具有最大电阻率7 246.cm。     

铁掺杂对不同导电类型硅材料电阻率的影响

采用电阻率为4.8Ω·cm的p型硅片和10Ω·cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料.在室温避光条件下,测量样品电阻率p,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响.结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74× 10-5 mol/cm2时,在1 200℃下扩散1h后,材料具有最大电阻率7 246Ω· cm.     

CaS:Eu,Sm荧光粉表面二氧化硅包覆对其光激励发光特性的影响(英文)

改进了CaS∶Eu,Sm荧光粉在实时剂量计系统中的稳定性和实用性。以不同体积的正硅酸乙酯作为前驱体,采用溶胶凝胶法对CaS∶Eu,Sm荧光粉进行表面包覆。分别使用荧光分光光度计和酸度计对荧光粉的发光特性和防水特性进行表征。实验结果显示当质量分数为5%时,包覆层能明显提高荧光粉的稳定性且不影响荧光粉的发光强度。从材料的光激励发光和剂量响应测试实验中可以得出材料的退火特性以及相应的辐射剂量值。以CaS∶Eu,Sm荧光粉为基础的辐射剂量测试系统显示在0.1～300 Gy范围内具有良好的线性关系。结果显示表面包覆层明显抑制光激励发光特性,而且随着辐射剂量的增加,这种影响愈来愈显著。最后,我们提出了以光激励发光技术为基础的辐射剂量在线测试改进系统。