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采用分子束外延(MBE)法在Si(001)衬底上生长Er2O3高k薄膜材料。X射线衍射结果表明,用这一方法得到的硅基Er2O3薄膜是(440)取向的单晶,电学测试预示在Si和Er2O3薄膜的界面有一层很薄的界面层。为了研究Si/Er2O3异质结的界面,通过原位反射式高能电子衍射(RHEED)和俄歇能谱(AES)的方法对Er2O3薄膜在Si衬底上的初始生长情况进行研究。发现在清洁的Si衬底和有SiO2的Si衬底上生长Er2O3薄膜,原位RHEED图谱和AES都有不同的结果,预示着这两种不同的衬底上生长Er2O3薄膜的初始阶段有不同的化学反应。这一现象可能阐释了界面的演变和控制机理。 相似文献
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HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy. 相似文献
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