Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

The effects of barium on electrical and dielectric properties of the SnO_2·Co_2O_3·Ta_2O_5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO_3 concentration from 0mol% to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO_{2}-based varistors.     

薄层扫描法测定洋金花中3种莨菪生物碱的研究

在硅胶G薄层板上,以甲苯 丙酮 无水乙醇 氨水=体积比(15∶10∶7∶2)为展开剂,用改良碘化铋钾与KI I2混合液作为显色剂,采用双波长薄层扫描法实现了中药材洋金花中3种莨菪生物碱(山莨菪碱、阿托品、东莨菪碱)的同时分离和测定。平均加标回收率在105%～107%之间。     

MgSiO3掺杂对ZnO压敏电阻器电学性质的影响

采用传统陶瓷工艺制备了MgSiO3掺杂的防雷用ZnO压敏电阻。实验发现,掺杂0.04%的MgSiO3(物质的量)能显著提高其电流–电压非线性、通流能力和电压梯度E1.0,且能降低样品的漏电流IL以及残压比V40kA/V1mA。其非线性系数α和压敏电压梯度分别高达120,180V/mm,样品正反面各五次通流40kA、8/20μs波后,残压比和压敏电压变化率?V1mA/V1mA分别仅为2.56和–2.9%,且漏电流变化很小。对样品的微观结构分析显示,其电学性能的提高和晶粒的均匀程度有关。     

稀土元素发光特性及其应用

近年来 ,稀土元素及其化合物已成为现代尖端科技领域不可缺少的特殊材料 ,本文就其发光特性和应用作一介绍     

“三新”改革下高中物理实验资源开发路径探索——以“安培力”教学为例

在新课程、新高考、新教材(简称“三新”)改革背景下,物理教师如何适应新高考、用好新教材,如何多渠道开发整合实验资源是需要解决的关键问题.在新教材使用的教学实践中,探索研究了在物理教学中进行实验资源开发的4种有效路径与策略,并以“安培力”一课为例,具体呈现课堂教学各个环节的实验设计方案及对应的开发路径与策略.     

Electrical property effect of oxygen vacancies in the heterojunction of LaGaO_3/SrTiO_3

Density functional theory within the local density approximation is used to investigate the effect of the oxygen vacancy on the LaGaO_3/SrTiO_3(001) heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3~(rd) layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO_3 side. Compared with the heterojunction without introducing oxygen vacancy, the heterojunction with introducing the oxygen vacancy does not change the origin of the two-dimensional electron gas(2DEG), that is, the 2DEG still originates from the d_(xy) electrons, which are split from the t~(2g) states of Ti atom at interface; however the oxygen vacancy is not beneficial to the confinement of the 2DEG. The extra electrons caused by the oxygen vacancy dominantly occupy the 3d_(x~2-y~2) orbitals of the Ti atom nearest to the oxygen vacancy, thus the density of carrier is enhanced by one order of magnitude due to the introduction of oxygen vacancy compared with the density of the ideal structure heterojunction.     

(Li,Nb)掺杂SnO_2压敏材料的电学非线性研究

研究了掺锂对 Sn O2 压敏电阻器性能的影响。研究发现 L i 对 Sn4 的取代能明显提高陶瓷的烧结速度和致密度 ,且能大幅度改善材料的电学非线性性能。掺入 x(L i2 CO3)为 1.0 %的陶瓷样品具有最高的密度 (ρ=6 .77g/ cm3)、最高的介电常数 (ε=185 1)、最低的视在势垒电场 (EB=6 8.86 V/ mm)和最高的非线性常数 (α=9.9)。对比发现 ,Na 由于具有较大的离子粒半径 ,其掺杂改性性能相对较差。提出了 Sn O2 · L i2 CO3· Nb2 O5晶界缺陷势垒模型     

(Cd,Co,Nb)掺杂的SnO2压敏材料的电学性质

研究了Cd对(Co，Nb)掺杂SnO2压敏材料电学性质的影响。组分为97．65％SnO2 O．75％Co2O3 0．10％Nb2O5 1．50％CdO的压敏电阻具有最大非线性系数(a=22．2)和最高的势垒(ψB=0．761eV)．当CdO的摩尔分数从0增加到3％时，(Co，Nb)掺杂SnO2压敏电阻的击穿电压从366V／mm增大到556V／mm，1kHz时的相对介电常数从1429减小到1108。晶界势垒高度测量揭示，SnO2的晶粒尺寸的减小是击穿电压增高和介电常数减小的主要原因。对Cd掺杂量增加引起SnO2晶粒减小的根源进行了解释。     

CeO_2掺杂引起SnO_2压敏电阻的晶粒尺寸效应

研究了掺CeO2对SnO2Co2O3Ta2O5压敏电阻器性能的影响。研究发现:随着x(CeO2)从0增加到1%,压敏电压从190 V/mm增加到205 V/mm,相对介电常数从3 317减小到2 243,晶粒平均尺寸从12.16 mm减小到6.23 mm,在晶界上的Ce4+阻碍了SnO2晶粒的生长。为了解释样品电学非线性性质的起源,笔者提出了SnO2Co2O3Ta2O5CeO2晶界缺陷势垒模型。同时,对该压敏电阻器进行了等效电路分析,试验测量与等效电路分析结果相符。     

荧光光度法测定铽的进展

评述了近年来铽的荧光光度分析的进展情况，就其方法、显色剂、线性范围以及干扰情况对近年来国内铽的荧光光度分析进行了综述，引用文献34篇。