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碱性抛光液对铜布线电特性的影响 总被引:5,自引:5,他引:0
随着互连电路的规模发展到亚微米级,互连延迟已经成为超过门延迟的重要因素。减小延迟在互连结构中是不可避免的问题。化学机械抛光是最适合在多层铜互连结构中达到平整化目的的手段。出于对整体过程的考虑,我们将考察化学机械抛光对铜晶圆片电特性的影响。在这篇文章中,我们将考察两种抛光液在化学机械抛光中的影响,一种抛光液是酸性抛光液,来自于SVTC,另一种是碱性抛光液,由河北工业大学提供的。着重考察了三个方面的特性,电阻,电容和漏电流。电阻测试结果显示,河北工业大学提供的抛光液抛光后,电阻更小。而被两种抛光液抛光后的电容则相差不多,电容值分别为1.2 E-10F 和1.0 E-10F。同样,河北工业大学提供的抛光液抛光后的漏电流是1.0E-11A,低于SVTC提供的酸性抛光液。结果显示,河北工业大学提供的碱性抛光液会产生小的碟形坑和氧化物损失,优于SVTC提供的酸性抛光液。 相似文献
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We observed and analyzed the acid and HEBUT alkaline of Cu chemical mechanical polishing(CMP)slurry to evaluate their effects. Material analysis has shown that the planarity surfaces and the removal rate of alkaline slurry are better than the acid slurry during metal CMP processes. The global surface roughness and the small-scale surface roughness by 1010 m2 of copper film polished by the SVTC slurry are 1.127 nm and2.49 nm. However, it is found that the surface roughnesses of copper films polished by the HEBUT slurry are 0.728 nm and 0.215 nm. All other things being equal, the remaining step heights of copper films polished by the SVTC slurry and HEBUT slurry are respectively 150 nm and 50 nm. At the end of the polishing process, the dishing heights of the HEBUT slurry and the SVTC slurry are approximately both 30 nm, the erosion heights of the HEBUT slurry and the SVTC slurry are approximately both 20 nm. The surface states of the copper film after CMP are tested,and the AFM results of two samples are obviously seen. The surface polished by SVTC slurry shows many spikes.This indicates that the HEBUT alkaline slurry is promising for inter-level dielectric(ILD) applications in ultra large-scale integrated circuits(ULSI) technology. 相似文献
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为研究声传播和分子多模式振动能量弛豫的相互关系,本文提出了一种混合气体声 复合弛豫频谱的解析模型.该模型从振动模式微观能量转移及其耦合形成宏观弛豫过程两个角度, 分析了依赖于声频率的混合气体有效热容.并通过求解振动模式能量转移的通用弛豫方程, 最终得到可同时体现主副弛豫过程的声弛豫吸收和声频散的解析结果.仿真结果表明, 对于CO2, CH4, N2和O2组成的多种混合气体, 该模型的声吸收谱与实验数据相符,峰值误差在1%以内,且反映了多振动模式形成的 声复合弛豫吸收谱上通常仅会显现1-2个吸收波峰的物理现象.与已有模型相比, 本解析模型可直接求出混合气体声弛豫频谱上特征点的解析形式,并利于对其进行定性定量分析. 从而为研究声传播特性与气体分子弛豫特性的相互关系提供了一个有效理论模型. 相似文献
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毕业设计存在的问题及对策 总被引:4,自引:1,他引:3
毕业设计是学生即将完成学业的最后一个实践环节,也是大学生衔接学校和社会的一个重要阶段。它既是对所学知识的全面检验和总结,也为今后走向社会的实际应用奠定基础。毕业设计质量的高低是高校教学质量的直接反映。教育部对毕业设计的教学质量十分重视,专门就加强毕业设计工作发出了通知,目的是要求提高毕业设计的质量。随着教学改革的深化和社会的不断发展,影响毕业设计教学质量的因素越来越多,也越来越复杂。本文对目前影响毕业设计质量的问题进行了较全面的分析,并提出了相应的对策。 相似文献
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网络作为新兴信息平台,随着科学技术的发达以及人们物质、文化水平的提高,得到了长足的发展。Web服务作为网络发展的载体是发展最快和目前应用最广泛的服务。本文将从asp、IIS和SQL Server三个方面谈谈网络信息安全的相关策略。 相似文献
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For process integration considerations,we will investigate the impact of chemical mechanical polishing (CMP) on the electrical characteristics of the pattern Cu wafer.In this paper,we investigate the impacts of the CMP process with two kinds of slurry,one of which is acid slurry of SVTC and the other is FA/O alkaline slurry purchased from Tianjin Jingling Microelectronic Material Limited.Three aspects were investigated:resistance,capacitance and leakage current.The result shows that after polishing by the slurry of FA/O,the resistance is lower than the SVTC.After polishing by the acid slurry and FA/O alkaline slurry,the difference in capacitance is not very large. The values are 0.1 nF and 0.12 nF,respectively.The leakage current of the film polished by the slurry of FA/O is 0.01 nA,which is lower than the slurry of SVTC.The results show that the slurry of FA/O produced less dishing and oxide loss than the slurry of SVTC. 相似文献