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InGaAs/GaAsP strain-compensated multiple quantum wells (SCMQWs) and strained InGaAs/GaAsmultiple quantum wells (MQWs) were grown on GaAs substrates by metal organic vapor phase epitaxy(MOVPE). The results of double crystal X-ray diffraction (DCXRD) revealed that strain relief had beenpartly accommodated by the misfit dislocation formation in the strained MQW material. It led to thatthe full width half maximums (FWHMs) of superlattice satellite peaks are broader than those of SCMQWstructures, and there was no detectable room temperature photoluminecence(RT-PL)for the strained 相似文献
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MOCVD生长1.06μm InGaAs/GaAs量子阱LDs 总被引:1,自引:1,他引:0
用低压MOCVD生长应变InGaAs/GaAs量子阱,采用中断生长、应变缓冲层(SBL)、改变生长速度和调节Ⅴ/Ⅲ等方法改善InGaAs/GaAs量子阱的光致发光(PL)质量。PL结果表明,10s生长中断结合适当的SBL生长的量子阱PL谱较好。该量子阱应用于1.06μm激光器的制备,未镀膜的宽条激光器(100μm×1000μm)有低阈值电流密度(110A/cm2)和高的斜率效率(0.256W/A,per.facet)。 相似文献
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InGaAs/AlGaAs量子阱中量子尺寸效应对PL谱的影响 总被引:1,自引:1,他引:0
本文采用金属有机物化学气相淀积(MOCVD)方法设计并生长了两组InGaAs/A1GaAs应变多量子阱,量子阱的厚度分别为3nm和6nm,对其光致发光谱(PL)进行了研究,二者的发光波长分别为843nm和942nm,用有限深单量子阱理论近似计算了由于量子尺寸效应和应变效应引起的InGaAs/A1GaAs量子阱带隙的改变,这解释了两组样品室温下PL发射波长变化的原因。 相似文献