氨化法制备大量单晶GaN纳米线及其特性研究

利用磁控溅射技术先在硅村底上制备Ga2O3/Co薄膜,然后在管式炉中通入流动的氨气在950℃对薄膜进行氨化,反应后成功制备出大量GaN纳米线.采用X射线衍射(xRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米线,纳米线的直径在50 nm～150 nm范围内,长度为几十微米.     

氨化Si基Ga2O3/Co薄膜合成GaN纳米线及其表征

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950"C下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.     

Structural Stability and Elastic Properties of Wurtzite TIN under Hydrostatic Pressure

The structural stability and elastic properties of wurtzite thallium nitride （TIN） under hydrostatic pressure are studied for the first time by first-principles calculations. The enthalpy calculations predict that TIN undergoes a phase transition from the wurtzite structure to the rocksalt structure at 19.2 GPa with a volume collapse of 13.0%. Our calculated results also show that this nitride is ductile in nature and exhibits high elastic anisotropy. Our ground-state results are in good agreement with the data of other theoretical calculations.     

Structural Transition from Ordered to Disordered of BeZnO_2 Alloy

Employing Monte Carlo simulations based on the cluster expansion,the special quasi-random structures and first-principles calculations,we systematically investigate the structure transition of BeZnO₂ alloys from the ordered to the disordered phase driven by the increased synthesis temperature,together with the solid-state phase diagram.It is found that by controlling the ordering parameter at the mixed sublattice,the band structure can vary continuously from a wide direct band gap of ...     

Structural, Electronic and Elastic Properties of Cubic Perovskites SrSnO3 and SrZrO3 under Hydrostatic Pressure Effect

Using the plane-wave pesudopotential （PWPP） method within the generalized gradient approximation （GGA＇）, we investigate the hydrostatic pressure induced effect on the structural, electronic and elastic properties of cubic perovskites SrSn03 and SrZr03. The pressure dependence of the lattice constants, some indirect and direct band gaps, the upper valence bandwidths, the elastic stiffness constants and the aggregate elastic moduli, as well as the Debye temperature are investigated. Our calculated ground-state results are in good agreement with the available experimental and theoretical data.     

Pressure-Induced Cubic-to-Hexagonal Phase Transition in Cu2O

Phase transition and band structure of Cu2O are systematically investigated by using the HSE06 range-separated hybrid functional. Cubic Cu2O under pressure transforms to the metastable hexagonal phase. Our further investigations reveal that the first-order phase transition is driven by the elastic and dynamical instabilities. Furthermore, the stable band gap of cubic phase is always direct and greatly enhanced by pressure, whereas the hexagonal phase shows the semi-metallic band structure.     

GaN纳米棒的催化合成及其发光特性

使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.     

压电陶瓷压电系数测量的一种实验改进方法

针对压电陶瓷的压电系数实验测量中仪器调节的困难,通过放置一个三面箱体辅助仪器来改善对光路的调节,同时在给压电陶瓷施加电压的电路中接入电压报警器,有效控制施加在压电陶瓷上的电压大小,以此避免压电陶瓷的疲劳受损乃至被烧坏。     

氨化Si基Ga2O3/Co薄膜合成GaN纳米线及其表征

采用磁控溅射技术先在Si衬底上制备Ga2O3/Co薄膜,然后在950"C下流动的氨气中进行氨化反应制备GaN纳米棒.应用X射线衍射、扫描电镜、傅里叶红外吸收光谱、选区电子衍射和高分辨透射电子显微镜对样品进行表征.结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.观察发现纳米棒表面光滑.并讨论了GaN纳米棒的生长机制.     

Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si（111） substrates

A mass of GaN nanowires has been successfully synthesized on Si（111） substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffraction, scanning electron microscopy, high resolution transmission electron microscope and Fourier transformed infrared spectra are used to characterize the samples. The results demonstrate that the nanowires are of single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces. The growth mechanism of GaN nanowires is also discussed.