Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

Low temperature photoluminescence(PL) measurements have been performed for a set of GaN/AlxGa1-xN quantum wells(QWs). The experimental results show that the optical full width at half maximum(FWHM) increases relatively rapidly with increasing Al composition in the AlxGa1-xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM’s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.     

硬件灵魂BIOS的二十五个解答(上)

1.什么是可读写(Flash)的BIOS? BIOS的发音是"bye-ose",是基本输入/输出系统的缩写.BIOS是机器的硬件自带的、在电脑没有访问磁片上程序之前决定机器基本功能的软件系统.就PC而言,BIOS包含了控制键盘、显示屏幕,磁碟机,串列通讯设备和很多其它功能的代码.     

Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells

The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multiquantum wells (MQWs) have been investigated by solving the Schrdinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.     

高热预算三维存储工艺中表面沟道PMOS研究

采用标准三维存储器工艺,制备作为外围器件的表面沟道PMOS管。存储单元制备过程中的高热预算对p型掺杂的多晶栅影响很大,尤其是金属硅化物作为栅极接触材料的p型多晶硅。对影响表面沟道PMOS管性能的因素进行研究,发现多晶硅侧墙氧化温度主导器件的性能。高温侧墙氧化引起严重的多晶硅耗尽,并导致高阈值电压。电容-电压曲线和二次离子质谱验证了这个现象。通过工艺优化,有效抑制了多晶硅耗尽程度,实现了可用于三维存储器的高性能表面沟道PMOS管。在1.2 V工作电压下,PMOS管的饱和电流可达120 μA/μm,漏电流低于1 pA/μm。     

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AIGaN quantum wells

Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.