氧化锌压敏陶瓷的微波烧结工艺研究

微波烧结技术因能改善被烧结材料的微观结构和性能,已经成为材料制备领域里新的研究热点。本文以氧化锌压敏陶瓷为研究对象,以Bi_2O_3含量、升温速率、烧结温度、保温时间为四要素对陶瓷的微波烧结工艺设计了正交实验。研究发现,微波烧结所得样品与传统烧结样品相比,其漏电流和非线性系数均得到了优化。通过对正交实验数据的分析,得出了针对每个性能的最优工艺参数及各要素对各性能影响的主次顺序,最后经综合考虑确定了微波烧结氧化锌压敏陶瓷的最优工艺参数,得到了压敏电位梯度为362. 3 V/mm,非线性系数为50. 24,漏电流密度为1. 55×10~(-6)A/cm~2,密度为5. 603 g/cm~3的氧化锌压敏陶瓷。缩短了烧结时间,优化了陶瓷的性能。     

Morphological effect on electrochemical performance of nanostructural CrN

Size and morphology are critical factors in determining the electrochemical performance of the supercapacitor materials, due to the manifestation of the nanosize effect. Herein, different nanostructures of the CrN material are prepared by the combination of a thermal-nitridation process and a template technique. High-temperature nitridation could not only transform the hexagonal Cr₂O₃ into cubic CrN, but also keep the template morphology barely unchanged. The obtained CrN nanostructures, including (i) hierarchical microspheres assembled by nanoparticles, (ii) microlayers, and (iii) nanoparticles, are studied for the electrochemical supercapacitor. The CrN microspheres show the best specific capacitance (213.2 F/g), cyclic stability (capacitance retention rate of 96% after 5000 cycles in 1-mol/L KOH solution), high energy density (28.9 Wh/kg), and power density (443.4 W/kg), comparing with the other two nanostructures. Based on the impedance spectroscopy and nitrogen adsorption analysis, it is revealed that the enhancement arised mainly from a high-conductance and specific surface area of CrN microspheres. This work presents a general strategy of fabricating controllable CrN nanostructures to achieve the enhanced supercapacitor performance.     

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采用Langmuir探针方法对氢等离子体中电子密度和电子能量概率函数随射频功率的变化进行研究,发现电子密度在射频功率增加过程中出现两次跳跃。通过发射光谱法测得氢等离子体Hα、Hβ和Hγ三条谱线强度比值的变化,进一步验证了密度跳跃现象。该现象说明氢等离子体的放电模式发生了从电感耦合到电容耦合再到螺旋波模式的转变。从电子与氢分子的相互作用和Nagoya type Ⅲ型(N-型)天线电场耦合作用两方面解释密度跳跃现象。随着输入功率的增加,电子与氢分子相互作用增强,使电子密度发生跃变;当天线横向电场Ey取最大值,螺旋波轴向波矢kz分别为π/la和3π/la时天线与等离子体耦合最好,分别产生两次密度跳跃。     

亚微米尺寸金属电极的制备工艺

亚微米尺寸金属电极在高电子迁移率晶体管(HEMT)等半导体电子学器件中有重要应用,其制作是器件制作中的关键工艺,对器件性能有着重要影响。本文选择合适的涂胶旋转转速、烘烤温度(180℃)和时间,可以有效地减少电子束曝光后所产生的气泡。通过对聚甲基丙烯酸甲酯/聚二甲基戊二酰亚胺(PMMA/PMGI)双层胶进行电子束曝光和显影,确定了合适的曝光剂量为550 μC/cm2。通过调整显影液配比,并将显影时间控制在合理范围,获得了光滑完整的PMMA/PMGI双层光刻胶曝光图形。开发了双层光刻胶电子束曝光工艺,制备出宽度为200 nm的金属电极。     

Manipulating metal-insulator transitions of VO2 films via embedding Ag nanonet arrays

Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO₂), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO₂(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (T_c) decreased from 68° to 51°. The mechanism of T_c decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO₂ films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO₂, which must be instructive for the other strongly correlated materials and important for applications.     

太赫兹宽谱源的研究进展

太赫兹宽谱源是指能够产生较宽频谱覆盖范围的太赫兹辐射源,近年来其相关研究受到越来越多的关注。太赫兹宽谱具有能量低,穿透性强和频谱覆盖范围宽等优点,在生物和医学成像、安全检查、化学成分分析等领域具有很大的潜在应用价值,因此研究太赫兹宽谱源对于推动上述领域的进步具有重要的科学意义。本文基于光学辐射源、电子学辐射源、热辐射源这3种太赫兹宽谱源,从产生机理、研究进展以及未来发展趋势对这3种方法进行分析和总结,对比了各自的优、缺点和应用范围。     

纳米FePt颗粒:MgO多层复合薄膜的外延生长、微观结构与磁性研究

采用脉冲激光沉积法,在MgO(100)面上外延生长了FePt:MgO多层纳米复合薄膜,FePt成分为Fe48Pt52.FePt纳米颗粒周期性嵌埋于单晶MgO外延层中.原位反射式高能电子衍射分析结果表明,MgO外延层呈层状生长,而FePt纳米颗粒呈岛状生长.在整个FePt:MgO纳米复合薄膜的生长过程中,成功实现了层状-岛状生长模式的交替控制.高分辨透射电子显微镜分析结果表明,退火热处理后,结晶完整的L10-FePt纳米颗粒粒径约为5 nm,呈扁平六角形状,在MgO基底上形成逐层排列的纳米点阵.磁滞回线结果表明,退火后薄膜矫顽力增大,有序度提高,磁性增强.     

First-principles study of structural,electronic and optical properties of ZnF_2

The structural, electronic, and optical properties of rutile-, CaC12-, and PdF2-ZnF2 are calculated by the plane-wave pseudopotential method within the density functional theory. The calculated equilibrium lattice constants are in reasonable agreement with the available experimental and other calculated results. The band structures show that the rutile-, CaCl2-, and PdF2-ZnF2 are all direct band insulator. The band gaps are 3.63, 3.62, and 3.36 eV, respectively. The contribution of the different bands was analyzed by the density of states. The Mulliken population analysis is performed. A mixture of covalent and weak ionic chemical bonding exists in ZnF2. Furthermore, in order to understand the optical properties of ZnF2, the dielectric function, absorption coefficient, refractive index, electronic energy loss spectroscopy, and optical reflectivity are also performed in the energy range from 0 to 30 eV. It is found that the main absorption parts locate in the UV region for ZnF2. This is the first quantitative theoretical prediction of the electronic and optical properties of ZnF2 compound, and it still awaits experimental confirmation.     

FeNiMo/SiO2复合粉芯的制备与软磁性能调控

目前金属软磁粉芯材料在高频电感等电子元件的应用前景广阔,然而其主要的构成元素属于过渡金属,表面易形成致密的氧化层,影响其软磁性能的调控.为了解决这些问题,本文引入H₂/Ar混合气体高温预处理工艺对FeNiMo原粉进行还原,证实了还原性气氛高温处理可以有效地去除材料表面的金属氧化物,增加金属单质的含量,进而显著提升FeNiMo原粉的有效磁导率.对预处理后的FeNiMo粉末进行SiO₂绝缘包覆,所获得的FeNiMo/SiO₂软磁复合材料表面包覆均匀;与未处理FeNiMo原粉包覆SiO₂所形成的软磁复合粉芯相比, H₂/Ar混合气体高温预处理后的FeNiMo/SiO₂具有更高的有效磁导率、更低的损耗.与同类其他软磁复合粉芯相比,通过H₂/Ar混合气体高温预处理工艺和绝缘包覆工艺的协同效应,所制备的FeNiMo/SiO₂复合粉芯具有优异的软磁性能.因此经过还原性气氛高温预处理工艺后的绝缘包覆可以更大程度地提升软磁粉芯复合...     

低饱和磁化强度、小线宽石榴石铁氧体单晶材料的可控制备

利用助熔剂法制备了不同In、V掺杂浓度的BiCaInV铁氧体单晶材料.通过X射线荧光光谱分析获得了不同掺杂离子的浓度,发现随着V离子浓度的增加,In离子的掺杂浓度明显减小.借助透射电子显微镜测试揭示了In离子对BiCaInV的晶胞起着主导作用,且随着In离子掺杂浓度的减小,BiCaInV单晶的晶面间距逐渐减小.进一步通...