分子束外延GaAs基M-HEMT与Si基HEMT材料研究北大核心

在GaAs基渐变缓冲层高迁移率晶体管(M-HEMT)器件中,二维电子气的输运性能对器件性能有决定性作用。系统研究了GaAs M-HEMT材料中不同In组分沟道和生长温度对沟道电子迁移率和薄层电子浓度的影响。结果表明,沟道In组分为0.65时,材料电学性能最好;提高生长温度能有效提高材料的迁移率。为了后续将Si CMOS技术与HEMT材料结合实现高集成度应用,将M-HEMT结构外延在硅衬底上并得到了初步的研究结果,室温下电子迁移率为3300 cm^(2)/(V·s),薄层电子浓度为4.5×10^(12)cm^(-2)。     

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica

The growth of γ-In₂Se₃ thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In₂Se₃ is achieved at a relatively low growth temperature. An ultrathin β-In₂Se₃ buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In₂Se₃ at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are observed in the achieved γ-In₂Se₃ thin films.