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Sub-wavelength structures(SWS) were prepared on Ge substrates through photolithography and reactive ion etching(RIE) technology for broadband antireflective purposes in the long wave infrared(LWIR) waveband of 8-12 μm.Topography of the etched patterns was observed using high resolution optical microscope and atomic force microscope(AFM).Infrared transmission performance of the SWS was investigated by Fourier transform infrared(FTIR) spectrometer.Results show that the etched patterns were of high uniformity ... 相似文献
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随着大规模InSb 红外焦平面(FPA)器件的发展,探测器制备的传统湿法刻蚀工艺已越来越难以满足新工艺要求。介绍了一种用于制备InSb 红外焦平面探测器的新湿法刻蚀工艺:使用适当比例的柠檬酸/H2O2 系刻蚀剂代替现有乳酸/硝酸系刻蚀剂,同时采用N2 气泡搅拌刻蚀装置来辅助刻蚀。通过实验对比分析表明,新刻蚀工艺可以很好地解决原湿法刻蚀横向刻蚀和下切效应,提高了刻蚀均匀性和平整度,减小了表面粗糙度,并明显降低了InSb 器件的漏电流,提高了电性能。 相似文献
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